MMA6263QR2 vs MMA6262QR2-FR Comparaison
Comparaison détaillée côte à côte de MMA6263QR2 par NXP Semiconductors et MMA6262QR2-FR par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MMA6263QR2 - ±1.5g Dual-Axis Analog Accelerometer | NXP / Freescale
MMA6263QR2 ⚠ Dernier achatNXP Semiconductors
MMA6262QR2-FR - ±1.5g Dual-Axis Micromachined Accelerometer | NXP
MMA6262QR2-FR NrndComparaison des spécifications
| Paramètre | MMA6263QR2 | MMA6262QR2-FR |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motion Sensors | Motion Sensors |
| Statut du cycle de vie | Dernier achat | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,45 | $4,21 |
| Type de capteur | Accelerometer, Dual Axis (X, Y) | Accelerometer, dual-axis (X, Y) |
| Acceleration Range | ±1.5 g (g-select to ±6 g) | ±1.5 g |
| Sensitivity | 740 mV/g to 860 mV/g (typ. 800 mV/g at 3.3 V) | 800 mV/g (typical, ratiometric) |
| Tension d'alimentation | 3.3 V nominal (range per datasheet) | — |
| Type de sortie | Analog, ratiometric voltage | Analog, ratiometric to VDD |
| Bandwidth | 900 Hz sensor bandwidth | — |
| Low-Pass Filter | 1-pole on-chip, ~400 Hz cutoff | — |
| Zero-g Output (Typ) | 1.65 V (mid-supply) | — |
| Temperature Compensation | On-chip factory trimmed | — |
| Self-Test | Logic-level input on each axis | Yes (external logic input) |
| Boîtier | 16-QFN-EP (6x6 mm) with exposed pad | 16-QFN-EP, 6 mm x 6 mm, exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Lead Status | Contains Lead (legacy package) | — |
| Statut RoHS | RoHS Compliant | RoHS Compliant (Contains Lead in some variants - check datasheet) |
| Operating Principle | Capacitive micromachined (MEMS) | — |
| Number of Axes | — | 2 (X, Y) |
| Bandwidth (-3 dB) | — | 150 Hz (internal 1-pole LPF) |
| Supply Voltage (VDD) | — | 2.2 V to 3.6 V |
| Courant d'alimentation | — | 2 mA (typical) |
| Zero-g Output (ratiometric) | — | VDD/2 (typical) |
| Température de fonctionnement | — | -40 °C to +105 °C |
| Shock Survival | — | 2000 g |
| MEMS Process | — | Capacitive micromachined (surface micromachining) |