MRF8S18120HSR3 vs MRF8S21100HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S18120HSR3 par NXP Semiconductors et MRF8S21100HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
MRF8S18120HSR3 ✓ ActifNXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S18120HSR3 | MRF8S21100HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $65,00 | $65,00 |
| Manufacturer | NXP Semiconductors | — |
| Part Number | MRF8S18120HSR3 | — |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | — |
| Style de montage | Surface Mount (ceramic flange) | — |
| Operating Class | Class AB / Class C | Class AB or Class C |
| Application | GSM / GSM EDGE cellular base station power amplifiers | W-CDMA, LTE base-station power amplifiers |
| Statut RoHS | Compliant | Compliant (per NXP product family) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Boîtier / Format | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| Type de montage | — | Chassis / flange mount, screw-down |
| Lead-Free | — | Yes |