MT53E256M32D2DS-046 vs MT53E256M32D2DS-053 WT:B Comparaison
Comparaison détaillée côte à côte de MT53E256M32D2DS-046 par Micron Technology et MT53E256M32D2DS-053 WT:B par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Micron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ ActifMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActifComparaison des spécifications
| Paramètre | MT53E256M32D2DS-046 | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,10 | $21,90 |
| Type de mémoire | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit | 8 Gbit (256M x 32) |
| Organisation de la mémoire | 256M x 32 | 256M x 32 |
| Clock Frequency | 2133 MHz | — |
| Débit de données | [DATA_NEEDED: data rate] | 1866 Mbps/pin (1.866 GHz) |
| Core Supply Voltage (VDD) | 1.1 V | — |
| Interface Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Boîtier | 200-WFBGA (10 x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Operating Temperature (IT grade) | [DATA_NEEDED: IT temperature range] | — |
| Speed Grade | -046 | — |
| Product Generation | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB/LCSC listing) |
| Automotive Qualification (AUT grade variant) | AEC-Q100 qualified (AUT:B variant) | — |
| Packaging (TR suffix) | Tape & Reel (TR) or Tray | — |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Self-Refresh | — | Auto self-refresh with built-in temperature sensor |
| Caractéristiques | — | Auto precharge, write leveling, ZQ calibration |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| Niveau MSL | — | [DATA_NEEDED: MSL level] |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |