MW7IC2040NR1 vs MW7IC2220NBR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2040NR1 par NXP Semiconductors et MW7IC2220NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MW7IC2040NR1 | MW7IC2220NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $24,20 | $21,50 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | — |
| Fonction | Two-stage integrated power amplifier with on-chip matching | W-CDMA Wideband Integrated Power Amplifier |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | 31 dB (typical at 2.17 GHz) |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| Boîtier / Format | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | — |
| Nombre de broches | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| Type de montage | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (flange/over-molded) |
| Température de fonctionnement | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | — |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| Statut RoHS | Compliant (per NXP product family) | — |
| Frequency Range | — | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |