MX30LF1GE8AB-TI-TR vs MT29F1G08ABAEAWP-IT:E Comparaison
Comparaison détaillée côte à côte de MX30LF1GE8AB-TI-TR par Macronix et MT29F1G08ABAEAWP-IT:E par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Macronix
MX30LF1GE8AB-TI-TR - 1Gbit 3V SLC NAND Flash, x8, TSOP-48 | Macronix
MX30LF1GE8AB-TI-TR ✓ ActifMicron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ ActifComparaison des spécifications
| Paramètre | MX30LF1GE8AB-TI-TR | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Marque | Macronix | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,89 | $1,60 |
| Type de mémoire | Non-Volatile NAND Flash (SLC) | — |
| Memory Organization | 128 M x 8 | — |
| Density | 1 Gbit (1024 Mbit) | — |
| Type d'interface | Parallel Asynchronous (ONFI 1.0) | — |
| Cell Technology | Single-Level Cell (SLC) | — |
| Page Size | 2112 bytes (2048 data + 64 spare) | 2048 bytes + 64 bytes spare |
| Block Size | 64 pages (128 KB + 4 KB spare) | 128 KB |
| Number of Blocks | 1024 | — |
| Access Time (tR) | 20 ns / 25 ns (grade dependent) | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Active Read Current (ICC1) | 15 mA typical | — |
| Program / Erase Current (ICC2) | 15 mA typical | — |
| Program / Erase Endurance | 100 K cycles per block (typical) | — |
| Data Retention | 10 years (typical) | 10 years |
| Température de fonctionnement | -40 C to +85 C (industrial) | -40C to +85C |
| Boîtier | 48-pin TSOP-I (Type I) | TSOP-48 |
| Type de montage | Surface Mount | Surface Mount |
| ECC Architecture | ECC-Free (external host ECC required) | — |
| Compliance Standard | ONFI 1.0 | — |
| Bad Block Mark | 00h on 1st and 2nd page (per datasheet v1.3) | — |
| Statut RoHS | Compliant | Compliant |
| Bad Block Indicator | Marked at 1st and 2nd page (00h) per datasheet v1.3 | — |
| R/B# Power-On Delay | 100 us (per datasheet v1.3) | — |
| Taille de mémoire | — | 1 Gbit (128 MB) |
| Organisation de la mémoire | — | 128M x 8 |
| Interface | — | Parallel |
| Tension d'alimentation | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |