RTAX1000S-LG624V vs RTAX2000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX1000S-LG624V par Microchip Technology et RTAX2000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ ActifMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX1000S-LG624V | RTAX2000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 600,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 2,000,000 gates |
| Logic Cells | 18144 | — |
| Configurable Logic Blocks (CLBs) | 12096 | 21,504 |
| Technology | Digital CMOS, antifuse-based | — |
| Core Supply Voltage | 1.5 V (nominal) | [DATA_NEEDED: core supply voltage] |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC protection |
| Boîtier | CG624 (624-pin ceramic column grid array, LG624) | CG624, 624-pin ceramic column grid array |
| Température de fonctionnement | -55C to +125C | — |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| Type de montage | Surface Mount | Surface Mount |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Configuration | — | Single-chip, live at power-up (no boot device required) |
| Process Technology | — | Digital CMOS |
| Speed Grade | — | -1 |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |