RTAX1000SL-1CGS624B vs RTAX1000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX1000SL-1CGS624B par Microchip Technology et RTAX1000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000SL-1CGS624B - Rad-Tolerant FPGA 1M Gates | Microchip
RTAX1000SL-1CGS624B ✓ ActifMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX1000SL-1CGS624B | RTAX1000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 200,00 | $3 600,00 |
| Logic Density | 1,000,000 equivalent system gates | — |
| ASIC Gates | 125,000 additional ASIC gates | — |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Series | RTAX1000SL | — |
| Speed Grade | -1 | -1 |
| Technology | Digital CMOS | CMOS antifuse (one-time programmable) |
| Programming Technology | Anti-fuse (one-time programmable, live at power-up) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Boîtier | 624-ball Ceramic CGA (CGS624) | LG624 (624-ball ceramic column grid array) |
| Type de montage | Surface Mount | Surface Mount |
| Radiation Tolerance | Radiation-tolerant (space flight qualified) | — |
| Qualification | DLA SMD 5962-0422006QUA per MIL-PRF-38535 | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tension d'alimentation | [DATA_NEEDED: core/IO supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Architecture Base | Derived from Microsemi commercial Axcelerator family | — |
| Equivalent System Gates | — | 1000000 |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |