RTAX1000SL-1CGS624B vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX1000SL-1CGS624B par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000SL-1CGS624B - Rad-Tolerant FPGA 1M Gates | Microchip
RTAX1000SL-1CGS624B ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX1000SL-1CGS624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 200,00 | $0,00 |
| Logic Density | 1,000,000 equivalent system gates | — |
| ASIC Gates | 125,000 additional ASIC gates | — |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Series | RTAX1000SL | — |
| Speed Grade | -1 | -1 |
| Technology | Digital CMOS | Digital CMOS, antifuse nonvolatile |
| Programming Technology | Anti-fuse (one-time programmable, live at power-up) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Boîtier | 624-ball Ceramic CGA (CGS624) | 624-ball ceramic CGA (CGS624) |
| Type de montage | Surface Mount | Surface Mount |
| Radiation Tolerance | Radiation-tolerant (space flight qualified) | — |
| Qualification | DLA SMD 5962-0422006QUA per MIL-PRF-38535 | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tension d'alimentation | [DATA_NEEDED: core/IO supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Architecture Base | Derived from Microsemi commercial Axcelerator family | — |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |