RTAX1000SL-CQ352V vs RTAX2000SL-1CQ352V Comparaison

Comparaison détaillée côte à côte de RTAX1000SL-CQ352V par Microchip Technology et RTAX2000SL-1CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX1000SL-CQ352V RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V ✓ Actif
Microchip Technology
RTAX2000SL-1CQ352V RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1CQ352V ✓ Actif

Comparaison des spécifications

Paramètre RTAX1000SL-CQ352V RTAX2000SL-1CQ352V
Marque Microchip Technology Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $2 050,00
Family RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) RTAX-S/SL Radiation-Tolerant FPGA
Equivalent System Gates 1,000,000 2,000,000
CLBs (Logic Modules) 12,096 —
Logic Cells 18,144 32,256
Maximum Toggle Frequency 581 MHz —
Process Technology 0.15 um CMOS CMOS, antifuse OTP interconnect
Core Voltage 1.5 V —
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant, space-flight qualified family Radiation-tolerant (space flight grade)
Power-Up Behavior Live at power-up (non-volatile) —
Configuration Upset Immunity No SEU in configuration memory (antifuse) —
Embedded Memory Embedded SRAM with built-in FIFO control logic Embedded SRAM with built-in FIFO control
Boîtier 352-pin Ceramic CQFP (CQ352V) 352-pin ceramic CQFP (CQ352)
Type de montage Surface Mount Surface Mount
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
I/O Voltage [DATA_NEEDED: I/O bank voltage range] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating in krad (Si)] [DATA_NEEDED: TID rating]
Niveau MSL [DATA_NEEDED: moisture sensitivity level] Not applicable (ceramic package)
Statut RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Estimated Equivalent Gates per CLB [DATA_NEEDED: gates-per-CLB ratio] —
CLB Count — 21,504
Core Supply Voltage — 1.5 V (1.425 V to 1.575 V)
Configuration — Live at power-up, single chip (antifuse)
Clocking — Segmentable clock resources, chip-wide highway routing
Application Domain — Space flight systems
I/O Supply Voltage — [DATA_NEEDED: I/O bank voltage]

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