RTAX2000D-1CQ352B vs RTAX2000D-1CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX2000D-1CQ352B par Microchip Technology et RTAX2000D-1CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ ActifMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000D-1CQ352B | RTAX2000D-1CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 120,00 | $3 950,00 |
| Family | RTAX-S/SL and RTAX-DSP (RTAX2000D) | — |
| Technology | Antifuse (nonvolatile), Digital CMOS | Digital CMOS, antifuse (nonvolatile) |
| Equivalent System Gates | 2,000,000 | — |
| CLBs (Logic Cells) | 19,712 CLBs / 29,568 logic cells (per family organization) | — |
| DSP Mathblocks | Up to 120 (18-bit x 18-bit MAC) | Up to 120 |
| DSP Performance | 125 MHz 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Total Ionizing Dose | 300 krad (Si) functional / 200 krad (Si) with operation | 200 krad (Si) |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | 1.425 V to 1.575 V (nominal 1.5 V) |
| Speed Grade | -1 | -1 |
| Temperature Range | Commercial (C) | — |
| Boîtier | 352-pin Ceramic Column Grid Array (CQ352) | CQFP-352 (CQ352), ceramic |
| Configuration | Live at power-up, no external configuration device (antifuse) | Live at power-up, single-chip, no external configuration device |
| Routing Features | Segmentable clocks, chip-wide highway routing, carry logic | — |
| Embedded SRAM Features | Built-in FIFO control logic | — |
| Type de montage | Surface Mount (ceramic column grid array) | Surface Mount |
| Application Domain | Space-flight, radiation-tolerant | — |
| Equivalent Gates | — | 2,000,000 |
| Logic Cells | — | 29,568 |
| CLBs | — | 19,712 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |
| Température de fonctionnement | — | [DATA_NEEDED: Operating Temperature] |
| Statut RoHS | — | [DATA_NEEDED: RoHS Status] |