RTAX2000D-CQ352B vs RTAX2000D-1CQ352V Comparaison

Comparaison détaillée côte à côte de RTAX2000D-CQ352B par Microsemi et RTAX2000D-1CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Actif

Comparaison des spécifications

Paramètre RTAX2000D-CQ352B RTAX2000D-1CQ352V
Marque Microsemi Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $3 100,00 $3 950,00
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2000000 —
Logic Cells 29568 29,568
CLBs 19712 19,712
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) 1.425 V to 1.575 V (nominal 1.5 V)
Process Technology CMOS antifuse —
Configuration Type One-time programmable antifuse, live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Clocking Features Segmentable clocks, chip-wide highway routing —
Arithmetic Support Carry logic —
Boîtier CQFP-352 ceramic quad flat pack CQFP-352 (CQ352), ceramic
Screening / Speed Grade B (burn-in screening); D suffix = tighter ICCA limits at 125C final test —
Type de montage Surface Mount Surface Mount
Application Domain Space-flight systems —
Radiation Tolerance Radiation-tolerant (TID/SEE per family datasheet) —
Statut RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
Température de fonctionnement [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: Operating Temperature]
I/O Supply Voltage [DATA_NEEDED: I/O Bank Supply Voltage] —
Maximum User I/O [DATA_NEEDED: Maximum User I/O Count] —
Equivalent Gates — 2,000,000
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Configuration — Live at power-up, single-chip, no external configuration device
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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