RTAX2000SL-LG1152V vs RTAX2000S-1CG1152V Comparaison
Comparaison détaillée côte à côte de RTAX2000SL-LG1152V par Microchip Technology et RTAX2000S-1CG1152V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-LG1152V ✓ ActifMicrochip Technology
RTAX2000S-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG1152V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000SL-LG1152V | RTAX2000S-1CG1152V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 440,00 | $0,00 |
| Family | RTAX-S/SL RadTolerant FPGAs | RTAX-S / RTAX2000S |
| Equivalent System Gates | 2000000 gates | 2,000,000 gates |
| Logic Cells | 32256 | 32,256 |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Technology | Digital CMOS antifuse (nonvolatile) | 0.15 um CMOS, antifuse OTP |
| User I/Os | Up to 684 (package dependent) | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| SEU Rate | Less than 1E-10 errors per bit-day | — |
| Configuration | One-time programmable antifuse, live at power-up | Live at power-up, single-chip antifuse |
| Boîtier | 1152-pin ceramic column grid array (CG1152) | 1152-terminal Ceramic, Metal-Sealed Cofired CBGA (CGA1152) |
| Type de montage | Surface Mount | — |
| Radiation Environment | Space-flight (rad-tolerant) | — |
| Derivative Family Base | Microsemi Axcelerator commercial FPGA family | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CLBs | — | 21,504 |
| Usable I/O | — | 684 inputs / 684 outputs |
| Core Voltage | — | 1.5 V |
| Speed Grade | — | -1 |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEE rated, see datasheet) |
| Embedded SRAM | — | Yes, with built-in FIFO control logic |
| Embedded Clocking | — | Segmentable clocks, chip-wide features |
| Max I/O Frequency | — | [DATA_NEEDED: maximum I/O frequency] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |