RTAX250S-1CG624V vs RTAX250SL-CG624V Comparaison

Comparaison détaillée côte à côte de RTAX250S-1CG624V par Microchip Technology et RTAX250SL-CG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX250S-1CG624V RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V - 250k Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CG624V ✓ Actif
Microchip Technology
RTAX250SL-CG624V RTAX250SL-CG624V - 250k-Gate Rad-Tolerant FPGA | Microchip

RTAX250SL-CG624V - 250k-Gate Rad-Tolerant FPGA | Microchip

RTAX250SL-CG624V ✓ Actif

Comparaison des spécifications

Paramètre RTAX250S-1CG624V RTAX250SL-CG624V
Marque Microchip Technology Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $10 000,00
Equivalent System Gates 250,000 250000
Configurable Logic Blocks (CLBs) 2816 —
Cell Organization 4224 cells —
Family RTAX-S Radiation-Tolerant FPGA RTAX-S/SL and RTAX-DSP RadTolerant FPGAs
Programmable Technology Antifuse (CMOS) —
Speed Grade -1 Standard (C) commercial flight grade; -1 speed variant available
Combinatorial CLB Delay (Max) 0.930 ns —
Boîtier 624-terminal Ceramic Grid Array (CGA) 624-pin Ceramic Column Grid Array (CG624)
Package Code CG624 —
Température de fonctionnement -55C to +125C [DATA_NEEDED: operating temperature range]
Qualification / Screening V grade (space screening) —
Type de montage Surface Mount Surface Mount
Configuration Live at power-up, single-chip —
Embedded Memory Embedded SRAM with FIFO control logic —
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating] —
Supply Voltage (Core) [DATA_NEEDED: core supply voltage] —
Logic Cells — 4224
CLB Count — 2816
User I/O (Inputs) — 248
User I/O (Outputs) — 248
Core Supply Voltage — 1.425 V to 1.575 V
Process Technology — CMOS
Program Technology — Antifuse (one-time programmable)
Embedded SRAM — Yes (with built-in FIFO control logic)
Configuration Device Required — No (live at power-up)
Radiation Tolerance — Radiation-tolerant (space flight qualified family)

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