RTAX250S-LG624V vs RTAX1000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX250S-LG624V par Microchip Technology et RTAX1000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-LG624V ✓ ActifMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250S-LG624V | RTAX1000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $3 600,00 |
| Logic Cells | 4224 | 18144 |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Equivalent Gate Count | 250000 gates | — |
| Maximum Toggle Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | [DATA_NEEDED: core supply voltage range] | — |
| User I/O Count | 248 | — |
| Boîtier | 624-Pin LGA (LG624) | LG624 (624-ball ceramic column grid array) |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Radiation Tolerance | Radiation-tolerant (space-grade flow, V grade) | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Single-Event Effects Immunity | [DATA_NEEDED: SEE/TID data] | — |
| Equivalent System Gates | — | 1000000 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |