ADP31100001RZ - Dual 12V MOSFET Driver | onsemi
Référence : ADP31100001RZ ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.0689 | $0,07 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
ADP31100001RZ Présentation
A MOSFET gate driver is an interface IC between a low-power control circuit and the gate of a power MOSFET. Its role in the power-management hierarchy is gate driver → interface driver → power-semiconductor controller, because it translates control signals into the higher voltage and current required to switch MOSFET gates rapidly and reliably. The ADP3110 supports efficient, high-performance power conversion while keeping the controller isolated from direct high-current gate-drive demands.
The verified data identifies the device as a dual, high-voltage MOSFET driver with output disable. It is optimized for two N-channel MOSFETs and a 12 V drive application. A bootstrapped driver uses an internal voltage relationship to establish the required gate-drive voltage for a high-side switch, allowing the part to fit nonisolated synchronous power-converter architectures. The dual-channel arrangement reduces the number of separate driver ICs required when two complementary or similarly arranged switches must be controlled.
The source snippets specifically classify ADP3110 as a power-management gate driver and identify it as a 2-channel, 12 V FET driver. One distributor listing also states that the architecture is suitable for industrial and automotive power-conversion systems, while another identifies the part under interface drivers, receivers, and transceivers. These classifications are consistent with a dedicated MOSFET-driver function but should not be treated as a substitute for the complete manufacturer datasheet.
Typical applications include nonisolated synchronous DC-DC conversion, low- and intermediate-voltage power-supply stages, industrial control systems, and automotive power modules where two N-channel MOSFET switches are used. The output-disable feature can support system shutdown, fault isolation, or controlled turn-off, subject to the device’s exact electrical limits and timing requirements.
Designers should verify the complete RZ pinout, supply limits, bootstrap-capacitor requirements, propagation delays, gate-drive ratings, and absolute maximum conditions against the onsemi datasheet before layout. Place the driver close to the power MOSFETs, keep gate loops short, provide a low-impedance supply return, and select external resistors and capacitors from the manufacturer’s recommended values. The listed distributor pages show current availability and purchasing references, but pricing and lead time should be confirmed at order time.
This page consolidates the verified distributor identity, product classification, package ordering code, and practical gate-driver design context. It distinguishes confirmed facts from specifications that require the manufacturer datasheet, helping engineers evaluate ADP31100001RZ without treating aggregator data as a complete electrical specification.
Alternatives de remplacement direct pour ADP31100001RZ — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ADP31100001RZ (même facteur de forme et même empreinte).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
Aucune alternative de remplacement direct disponible pour ce produit.
Demander des alternativesADP31100001RZ Valeurs maximales et caractéristiques électriques
| Product Type | Dual bootstrapped 12 V MOSFET driver |
| Driver Configuration | 2-channel |
| Switch Type | N-channel MOSFET |
| Architecture | Nonisolated synchronous |
| Nominal Drive Voltage | 12 V |
| Output Disable | Yes |
| Channel Count | 2 |
| Manufacturer | onsemi |
| Ordering Code | ADP31100001RZ |
| Device Classification | Power-management gate driver |
| Secondary Classification | Interface driver / receiver / transceiver |
| Isolation | Nonisolated |
| Application Category | Power management |
| Target Applications | Nonisolated synchronous power conversion |
| Package Identifier | RZ |
| RoHS Listing | ROHS |
Guide de configuration des broches du ADP31100001RZ rz
Configuration des broches du ADP31100001RZ (boîtier rz). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour ADP31100001RZ.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
ADP31100001RZ convient pour 6 applications: Nonisolated Synchronous DC-DC Converter, Industrial Power-Supply Control, Automotive Power-Conversion Module, 12 V MOSFET Switching Stage, Power-Management Reference Platform, Synchronous Converter Shutdown and Fault Control.
Nonisolated Synchronous DC-DC Converter
ADP31100001RZ fits the two-switch control stage of a nonisolated synchronous DC-DC converter because the verified description identifies it as a dual, bootstrapped, 12 V MOSFET driver optimized for two N-channel MOSFETs. Each channel can provide the gate-drive interface needed by a power switch while the converter manages conversion between the input and output rails. The 12 V drive specification gives the design a defined starting point, but the actual MOSFET gate charge, switching frequency, dead time, and supply limits must be verified from the onsemi datasheet. Bootstrap capacitors and Schottky diodes should be selected using the manufacturer’s guidance and checked against the converter’s operating voltage.
Recommandé
Industrial Power-Supply Control
ADP31100001RZ is suitable for industrial power-supply control when the system uses two N-channel MOSFET switches and a nonisolated synchronous topology. The verified Microchip USA description identifies the device as a 2-channel, 12 V FET driver intended for high-performance power-management applications. Its dual-channel structure can simplify the control layout when two power stages must be coordinated. Industrial qualification, operating-temperature range, isolation requirements, and fault-response timing are not supplied in the verified data and must be checked against the exact onsemi documentation before deployment.
Recommandé
Automotive Power-Conversion Module
ADP31100001RZ may fit an automotive power-conversion module that uses a 12 V gate-drive environment and two N-channel MOSFETs. The verified Microchip USA listing describes the driver as suitable for demanding industrial and automotive power-conversion systems, while the datasheet listing confirms its dual bootstrapped architecture. Automotive use still requires verification of AEC-Q100 status, temperature limits, transient immunity, load dump behavior, and automotive qualification documentation; none of those values are present in the supplied snippets. Engineers should use the manufacturer’s automotive specifications rather than infer compliance from the application description.
Recommandé
12 V MOSFET Switching Stage
ADP31100001RZ is directly aligned with a 12 V MOSFET switching stage because the verified sources repeatedly identify it as a dual, 12 V FET driver. The two outputs can be associated with the two N-channel switches in a nonisolated synchronous arrangement, reducing the need for separate single-channel driver ICs. The designer must verify output voltage, sink and source current, rise and fall behavior, and the external gate resistors against the MOSFETs being switched. The available data confirms the 12 V application class but does not provide the complete electrical drive-current ratings.
Recommandé
Power-Management Reference Platform
ADP31100001RZ can serve as the gate-drive element in a power-management reference platform that evaluates synchronous converter control, shutdown behavior, and switching performance. Its verified dual-channel and output-disable features make it useful for comparing two complementary or coordinated MOSFET drive paths. The part should be placed close to the power devices to minimize gate-loop inductance and switching-node coupling. Because the supplied sources do not include timing curves, bootstrap guidance, or package dimensions, the platform should be built only after the complete onsemi datasheet and reference design are obtained.
Recommandé
Synchronous Converter Shutdown and Fault Control
The verified product description identifies ADP3110 as a driver with output disable, making it relevant to controlled shutdown and fault-management experiments in synchronous power converters. The disable function can be used in a system-level shutdown path or coordinated with a controller’s protection logic, subject to the exact truth table and timing behavior. Designers should not connect or size the disable interface until the datasheet confirms its voltage thresholds, propagation behavior, and fail-safe state. Gate resistors, pull components, and bootstrap paths should be validated together because a disable event can interact with stored gate charge and the power-switch state.
Recommandé
Données de référence d'ingénierie pour ADP31100001RZ — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit |
|---|---|
| Product Type | Dual bootstrapped 12 V MOSFET driver |
| Manufacturer | onsemi |
| Package | RZ |
| Channel Count | 2 |
| Drive Voltage | 12 V |
| Supported Switch Type | N-channel MOSFET |
| Isolation | Nonisolated |
| Output Disable | Yes |
| Application Class | Power-management gate driver |
Principaux différenciateurs
- Dual-channel architecture (vs No verified same-package alternative was supplied)
- 12 V optimized drive class (vs No verified cross-brand equivalent was identified)
- Output disable (vs No verified same-package alternative was supplied)
Notes de conception
Place ADP31100001RZ close to the two MOSFETs and route each gate and source connection as a compact, low-inductance loop. The verified data confirms a dual N-channel MOSFET driver architecture but does not provide a PCB reference layout. Keep the driver’s ground return short and separate noisy power-current paths from sensitive control traces. Confirm the RZ footprint and pin numbering against the onsemi package drawing before release.
Treat the 12 V figure as the verified application drive voltage, not as a substitute for the complete operating range. Before selecting external gate resistors, determine the driver output current, MOSFET total gate charge, switching frequency, and required transition time from the manufacturer datasheet. The available snippets do not provide those ratings, so a resistor value or bootstrap capacitor should not be guessed.
Do not infer IGBT compatibility, automotive qualification, or exact disable logic from distributor application language. The verified sources identify N-channel MOSFET optimization and output disable, but the complete electrical limits, truth table, temperature range, and package pinout remain unavailable in the supplied data. Validate those items in the onsemi datasheet before schematic release, especially for safety-related shutdown behavior.
Informations de conformité
A JLCPCB search result labels the part ROHS, but the supplied evidence does not provide a complete compliance declaration. AEC-Q100 status, REACH status, lead-free status, halogen-free status, and conflict-minerals status are not established by the verified data.
