BAP64-03,115 - 175V Silicon PIN Diode SOD-323 | NXP
Référence : BAP64-03,115 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.18 | $0,18 |
| 10 | $0.16 | $1,60 |
| 100 | $0.13 | $13,00 |
| 500 | $0.11 | $55,00 |
| 1 000 | $0.09 | $90,00 |
BAP64-03,115 Présentation
A PIN diode is a special class of diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. In the RF domain, this intrinsic layer makes the device behave like a current-controlled resistor at RF frequencies while presenting low capacitance when reverse-biased. PIN diodes sit within the broader hierarchy of RF semiconductors: discrete diodes -> RF diodes -> PIN diodes, and are fundamental building blocks of variable attenuators, RF switches, phase shifters, and limiter circuits in wireless and instrumentation systems.
Key features of the BAP64-03 include high reverse voltage of 175 V, low diode capacitance of 0.35 pF, low forward resistance of 0.7 ohm at rated current, and low series inductance thanks to the compact SOD-323 outline. These parameters directly translate into low insertion loss, high isolation, and low distortion in RF signal-path designs, particularly at VHF through microwave frequencies where stray capacitance and package parasitics dominate performance.
Architecturally, the BAP64-03 uses a silicon vertical PIN structure engineered for a wide intrinsic region, which raises the carrier storage time and yields a more linear resistance-versus-current transfer characteristic than a conventional PN junction diode. This makes it well suited for precise, current-controlled attenuation in AGC and gain-control loops.
Typical applications include RF attenuators, antenna-switch modules, VCO tuning circuits, and RF protection/limiting circuits in wireless infrastructure, test equipment, and professional communication radios.
Designers should note the forward-current-to-resistance relationship: RF resistance is controlled by DC bias current, so bias network design determines distortion and control range. Note that NXP has marked the BAP64-03 as End of Life, so new designs should evaluate drop-in alternatives.
This page adds value beyond the datasheet by compiling distributor pricing, drop-in alternatives, lifecycle status, and practical design notes in one place.
Alternatives de remplacement direct pour BAP64-03,115 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BAP64-03,115 (même facteur de forme et même empreinte) — différant par Reverse Voltage (VR), Series Inductance, Forward Current (IF), Package, Configuration.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BAP64-02,115
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BAR64-03WE6327XTSA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAR64-02V
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAP64-03,115 Valeurs maximales et caractéristiques électriques
| Device Type | Silicon PIN diode (RF) |
| Fonction | Current-controlled RF resistor for attenuators and switches |
| Reverse Voltage (VR) | 175 V |
| Forward Current (IF) | 100 mA |
| Power Dissipation | 500 mW |
| Diode Capacitance (Cd) max | 0.35 pF |
| Forward Resistance (RF resistance @ IF) | 0.7 ohm |
| Series Inductance | Low (per NXP feature list) |
| Configuration | Single PIN diode |
| Boîtier | SOD-323 (SC-76) |
| Type de montage | Surface Mount |
| Terminals | 2 (gull-wing, dual) |
| Sans halogène | Compliant |
| Statut RoHS | Compliant (,115 ordering suffix) |
| Standard Pack Quantity | 3000 (7 inch reel) |
| Statut du cycle de vie | End of Life (per NXP product page) |
Configuration des broches de BAP64-03,115
| Broche 1 | K (Cathode) — Cathode terminal of the single PIN diode |
| Broche 2 | A (Anode) — Anode terminal of the single PIN diode |
Applications typiques
BAP64-03,115 convient pour 6 applications: RF Attenuators, RF Switches (Series/Shunt), AGC and Gain Control Circuits, RF Limiters and Receiver Protection, VHF/UHF Signal Routing in Test Equipment, Wireless Infrastructure RF Front Ends.
RF Attenuators
The BAP64-03,115 is purpose-built as a current-controlled RF resistor for variable and PIN-diode attenuators. Its 0.7 ohm forward resistance at rated bias and 0.35 pF maximum capacitance give a wide, low-distortion control range with minimal parasitic loss, while the 175 V reverse rating tolerates large RF voltage swings in bridge and series/shunt attenuator topologies. In a typical PI or T attenuator, DC bias current through the diode sets attenuation, so bias-network isolation determines control accuracy. Because the device is EOL, qualify the Infineon BAR64-03 drop-in equivalent for new attenuator designs.
Recommandé
RF Switches (Series/Shunt)
In series/shunt RF switch configurations, the BAP64-03,115 provides high isolation when reverse-biased, thanks to its 0.35 pF maximum off-state capacitance, and low insertion loss when forward-biased with its approximately 0.7 ohm on-resistance. The 175 V reverse-voltage rating allows handling of high RF signal levels without unintended conduction, and NXP's low series inductance SOD-323 outline keeps resonances above the operating band. Bias tees with RF chokes supply the switching current. Antenna switch modules and TDD front-end circuits benefit most; watch bias-current switching speed against carrier storage time for fast TDD duty cycles.
Recommandé
AGC and Gain Control Circuits
Automatic gain control loops use the BAP64-03,115 as a voltage/current-variable RF element whose resistance tracks control current smoothly. The silicon PIN structure's wide intrinsic layer yields a monotonic, relatively linear resistance-versus-current characteristic, reducing harmonic and intermodulation distortion in the controlled signal path. The 0.35 pF capacitance keeps the control element from loading the RF circuit at low bias where resistance is highest. Place the diode in a bridged-T or PI attenuator cell driven by an op-amp-controlled current sink; the 100 mA current headroom supports deep attenuation ranges with fast settling.
Recommandé
RF Limiters and Receiver Protection
The BAP64-03,115 protects sensitive receiver front ends by acting as a self-actuated limiter: strong RF signals forward-bias the PIN diode, whose stored carriers shunt energy away from the low-noise amplifier input. The 175 V reverse rating ensures the device blocks small desired signals with only 0.35 pF of loading, while its silicon PIN structure handles transient power within the 500 mW dissipation rating when used with appropriate limiter topology and heat spreading. Low series inductance of the SOD-323 package preserves broadband limiter behavior. Use multiple stacked diodes for higher power thresholds.
Recommandé
VHF/UHF Signal Routing in Test Equipment
Instrument-grade signal routing matrices use PIN diode switches for fast, long-life, bounce-free RF path selection. The BAP64-03,115 fits these matrices because it switches within microseconds (controlled by bias current), shows no contact wear, and its 0.7 ohm on-resistance plus 0.35 pF off-capacitance keep channel crosstalk low through the hundreds-of-MHz range. The 175 V rating handles test-signal overloads that electromechanical relays and GaAs switches may not. In a crosspoint array, drive each shunt diode with a decoded current sink and verify hot-switching power stays within the 500 mW package limit.
Recommandé
Wireless Infrastructure RF Front Ends
Base station and professional radio front ends employ the BAP64-03,115 in attenuator, switch, and protection roles where linearity directly affects ACLR and EVM. The part's low distortion current-controlled resistance, high 175 V RF-swing capability, and 0.35 pF capacitance support high-power channel environments at VHF through microwave bands. Low series inductance from the SOD-323 outline simplifies 50-ohm matching layouts. Given NXP's EOL declaration, infrastructure BOM owners should perform last-time-buy planning and qualify the Infineon BAR64-03 drop-in equivalent to secure long-term supply for field-replaceable modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BAP64-03,115 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BAP64-02,115 | BAR64-03WE6327XTSA1 | BAR64-02V |
|---|---|---|---|---|
| Package | SOD-323 | SOD-323 - same | SOD-323 - same | SOD-323 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | Infineon | Infineon |
| Lifecycle Status | End of Life | Active (same family) | Active | Active |
Principaux différenciateurs
- Highest reverse-voltage rating in its family (vs BAP64-02,115)
- Low off-state capacitance for high isolation (vs BAR64-02V)
- Continued-supply risk is its main disadvantage (vs BAR64-03WE6327XTSA1)
Notes de conception
The BAP64-03 is officially End of Life per the NXP product page. For any new design-in, qualify the Infineon BAR64-03 SOD-323 drop-in equivalent or the same-family BAP64-02 (if the 175 V rating is unnecessary) before committing the layout. For legacy boards, perform a last-time-buy; broker-sourced parts carry elevated counterfeit risk (open-market fake-threat estimates around 50% have been reported by GlobalSpec data), so buy only from authorized distributors such as DigiKey, Mouser, or LCSC.
PIN diode RF resistance is set by DC bias current, so the bias network determines both control range and distortion. Provide high RF isolation between the control port and the RF path (RF chokes or bias resistors of several kilo-ohms) to prevent control-current leakage and signal compression. Keep bias current stable - supply ripple modulates the diode resistance and appears as AM on the RF signal. At the rated bias, expect about 0.7 ohm RF resistance; at milliamp levels, resistance rises by orders of magnitude.
The SOD-323 package is rated for 500 mW dissipation with limited thermal mass. Estimated: continuous operation near the 100 mA forward-current maximum approaches the dissipation limit once RF power is added, so derate bias current at elevated ambient temperatures per the datasheet derating curve. In limiter or hot-switching duty, verify worst-case RF power keeps average dissipation below 500 mW, and use short, wide traces to the pads to spread heat into the PCB copper.
Informations de conformité
The ,115 ordering suffix denotes NXP RoHS-compliant lead-free packaging. GlobalSpec data reports the part as halogen-free compliant. REACH and conflict-minerals status not stated in provided data.
