BAS316,115 - 100V 250mA High-Speed Switching Diode SOD-323 | Nexperia
Référence : BAS316,115 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.16 | $0,16 |
| 10 | $0.13 | $1,30 |
| 100 | $0.085 | $8,50 |
| 500 | $0.062 | $31,00 |
| 1 000 | $0.048 | $48,00 |
| 3 000 | $0.038 | $114,00 |
BAS316,115 Présentation
A high-speed switching diode is a small-signal PN-junction device optimised for fast transition between conducting and blocking states. In the signal-chain taxonomy, the BAS316 family sits within switching diodes -> small signal diodes -> discrete diodes -> discrete semiconductors. The defining metric is reverse recovery time (trr), which determines how quickly the diode stops conducting when forward-biased current is interrupted; faster trr reduces switching losses, EMI, and logic-level glitches in fast digital and RF circuits.
Key differentiating specifications include the 4 ns trr (measured per IF=IR=10 mA, RL=100 ohm, IR(meas)=1 mA per the BAS16 series datasheet), a maximum continuous reverse voltage of 100 V (equivalent to the repetitive peak reverse voltage rating), and a power dissipation of 400 mW. Compared to general-purpose rectifiers such as the 1N4148 in glass or LL4148 in MiniMELF, the BAS316 delivers equivalent switching speed in a much smaller PCB footprint, and it is AEC-Q101 qualified for automotive-grade reliability.
The BAS316 is fabricated in planar technology, giving it tightly controlled electrical parameters, low leakage (IR max 0.5 uA at VR=80 V), and excellent high-temperature stability across the -65 C to +150 C operating ambient range. The SOD-323 package is a JEDEC-standard outline with a typical land pattern that supports automated pick-and-place assembly and reflow soldering.
Typical applications include high-speed rectification in switch-mode power supplies (SMPS), freewheeling/steering diodes for inductor loads, reverse-polarity protection on USB and battery interfaces, logic-level shifting and clamping in digital control circuits, and general-purpose RF detection at low frequencies. Designers also use it in sample-and-hold, ring demodulator, and ESD-clamp circuits where 4 ns trr is critical.
A key design consideration is the trade-off between trr and forward voltage drop: the BAS316 prioritises switching speed (4 ns) over low VF, so for high-current rectification above 250 mA a Schottky or standard rectifier is preferred. Always observe the 400 mW power dissipation limit and provide adequate thermal copper on the SOD-323 pads.
This page synthesises distributor pricing, drop-in alternatives in the SOD-323 footprint, and practical design notes not consolidated on the manufacturer datasheet, helping engineers accelerate selection and second-source decisions.
Alternatives de remplacement direct pour BAS316,115 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BAS316,135
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAS316-TP
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAS316
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTS2101PT1G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
1N4148WS-7-F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAS316QFZ
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BAS316,115 Valeurs maximales et caractéristiques électriques
| Diode Type | High-speed switching diode |
| Configuration | Single, PN-junction |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V |
| Continuous Reverse Voltage (VR) | 100 V |
| Average Forward Current (IF(AV)) | 250 mA |
| Forward Voltage (VF) Max | 1.25 V |
| Reverse Recovery Time (trr) Max | 4 ns |
| Reverse Current (IR) Max | 0.5 uA at VR=80 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A |
| Dissipation de puissance (Ptot) | 400 mW |
| Operating Ambient Temperature | -65 C to +150 C |
| Boîtier | SOD-323 (SC-76), 2 leads |
| Type de montage | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Technology | Planar silicon PN junction |
| Niveau MSL | 1 |
| Statut RoHS | Compliant |
Configuration des broches de BAS316,115
| Broche 1 | K (Cathode) — Cathode, marked with a band on the package top |
| Broche 2 | A (Anode) — Anode |
Applications typiques
BAS316,115 convient pour 7 applications: High-Speed Rectification in Switch-Mode Power Supplies (SMPS), Freewheeling Diode for Inductive Loads, Reverse-Polarity Protection for USB and Battery Interfaces, Logic-Level Clamping and Level Shifting, Automotive Body Electronics and ECU Signal Conditioning, Sample-and-Hold and Ring Demodulator Circuits, General-Purpose Clamping and Steering in Consumer Electronics.
High-Speed Rectification in Switch-Mode Power Supplies (SMPS)
The BAS316,115 fits secondary-side rectification in SMPS thanks to its 4 ns reverse recovery time and 100 V VRRM rating, which minimise switching losses and reverse-recovery-induced EMI at high switching frequencies. Placed on the secondary side of an isolated flyback or forward converter, it conducts inductor current during the freewheeling phase with a 1.25 V forward drop. Its 400 mW power dissipation and small SOD-323 footprint suit compact adapter designs where thermal copper is shared with surrounding components.
Recommandé
Freewheeling Diode for Inductive Loads
The BAS316,115 is well suited as a freewheeling (snubber) diode across relay coils, solenoids, and small motor windings, where it clamps back-EMF and protects driver transistors. Its 4 A IFSM surge rating handles the inrush transient when the inductor current commutates, while the 4 ns trr ensures fast turn-off that limits voltage spike amplitude. With 100 V reverse voltage rating, it tolerates the inductive kick from 24 V and 48 V coils without avalanche breakdown.
Recommandé
Reverse-Polarity Protection for USB and Battery Interfaces
The BAS316,115 is ideal for low-loss reverse-polarity protection on USB, Li-ion battery, and 12 V accessory ports where Schottky leakage would drain standby current. With 0.5 uA maximum reverse leakage at 80 V, it adds negligible quiescent draw in battery-powered designs, while its 1.25 V forward drop at 250 mA is acceptable for most 5 V and 12 V rails. Placed in series with the load, it blocks reverse-miswired batteries that could otherwise damage downstream ICs.
Recommandé
Logic-Level Clamping and Level Shifting
The BAS316,115 is widely used in digital logic interfaces for level shifting, signal clamping, and OR-ing logic gates because its 4 ns trr preserves signal integrity at high data rates. Placed between a 3.3 V microcontroller and a 5 V peripheral, it drops the logic level by 1.25 V with sub-nanosecond switching delay. The 100 V reverse rating provides generous margin for ESD events when paired with a TVS diode, making it a robust interface protection building block.
Recommandé
Automotive Body Electronics and ECU Signal Conditioning
The BAS316,115 is AEC-Q101 qualified, making it a reliable choice for automotive body electronics such as BCM modules, instrument clusters, and sensor signal conditioning. Its -65 C to +150 C operating range covers under-hood thermal environments, and its 4 ns trr supports PWM signal demodulation in automotive sensor interfaces. The compact SOD-323 package conserves PCB area in space-constrained ECU housings.
Recommandé
Sample-and-Hold and Ring Demodulator Circuits
The BAS316,115 is well suited to fast sample-and-hold, ring demodulator, and RF detector circuits where 4 ns trr is the dominant specification for accurate signal capture. In a diode-ring demodulator for low-frequency carrier detection, the matched forward voltage and ultra-fast recovery preserve the demodulated envelope without phase distortion. Its 100 V reverse rating tolerates the AC swing across the bridge, and 0.5 uA leakage keeps the held sample accurate over microsecond hold intervals.
Recommandé
General-Purpose Clamping and Steering in Consumer Electronics
The BAS316,115 is a cost-effective general-purpose clamping and steering diode in consumer electronics such as set-top boxes, IoT gateways, and home appliances, where its 4 ns trr and 1.25 V forward drop cover most logic-level and small-signal tasks. Its 250 mA rating handles indicator LED driving and small relay coils, while the 0.5 uA leakage prevents parasitic drain in battery-backed standby circuits. The SOD-323 footprint enables dense PCB layouts in slim enclosures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BAS316,115 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BAS316,135 | BAS316-TP | BAS316 | NTS2101PT1G | 1N4148WS-7-F |
|---|---|---|---|---|---|---|
| Package | SOD-323 (SC-76) | SOD-323 (SC-76) - same | SOD-323 (SC-76) - same | SOD-323 (SC-76) - same | SOD-323 - same | SOD-323 - same |
| Brand | Nexperia | Nexperia | Nexperia | Nexperia | onsemi | Diodes Incorporated |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 100 V | 100 V | 100 V | 100 V | 75 V |
| Average Forward Current (IF(AV)) | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 150 mA |
Principaux différenciateurs
- AEC-Q101 qualification with full BAS16 series electrical envelope (vs 1N4148WS-7-F (Diodes Incorporated))
- Lower reverse leakage at high voltage than 1N4148WS-7-F (vs 1N4148WS-7-F (Diodes Incorporated))
- 4 A surge current rating handles inductive kick (vs NTS2101PT1G (onsemi))
Notes de conception
The BAS316,115 is rated at 400 mW power dissipation in SOD-323 on the standard JEDEC reference PCB (50 mm x 50 mm, 1 oz copper). Estimated: with copper pad area below 10 mm^2 the effective theta_JA rises sharply, so for sustained currents above 100 mA or operation near 150 C ambient, expand the copper pad to at least 25 mm^2 and use thermal vias to inner planes to keep Tj below 175 C. Derate linearly to zero at 150 C per Nexperia BAS16 series datasheet.
For the SOD-323 footprint, follow the Nexperia BAS16 series recommended land pattern: cathode pad approximately 1.0 mm x 1.0 mm, anode pad 1.0 mm x 1.0 mm, with a 0.5 mm gap between pads. Use NSMD (non-solder mask defined) pads to improve solder joint reliability under thermal cycling. Place decoupling or snubber capacitors as close to the diode pads as possible to minimise parasitic inductance that can amplify reverse-recovery spikes at high dI/dt.
Do not assume the BAS316,115 can replace a Schottky diode above 250 mA - the 1.25 V forward drop at 250 mA is five times higher than a typical Schottky, dissipating 0.3 W per diode at full rated current versus 0.05 W for a Schottky. For high-current rectification above 500 mA, select a Schottky rectifier instead. Also avoid paralleling multiple BAS316,115 units to share current - the forward voltage mismatch and thermal coupling cause uneven current sharing.
Informations de conformité
AEC-Q101 (automotive) qualified per Nexperia BAS16 series datasheet. RoHS and REACH compliant, lead-free and halogen-free per Nexperia product page. Conflict-minerals declaration available from Nexperia corporate compliance.
