IXSH35N120A - 1200V 70A High Speed IGBT | IXYS
Référence : IXSH35N120A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.65 | $76,50 |
| 100 | $6.8 | $680,00 |
| 500 | $6.1 | $3 050,00 |
| 1 000 | $5.45 | $5 450,00 |
IXSH35N120A Présentation
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low saturation voltage and high current density of a bipolar transistor. Within the power-semiconductor taxonomy, an IGBT sits between MOSFETs and Thyristors, belonging to the broader family of Voltage-Controlled Power Devices used in switch-mode power conversion, motor drives, and induction heating. The High Speed designation indicates an optimized minority-carrier lifetime, trading off a small increase in VCE(sat) for dramatically faster turn-off and lower switching losses compared to standard (non-High Speed) IGBTs in the same voltage class.
Key features include 1200 V VCES, 70 A IC25 continuous collector current, 300 W power dissipation, a short-circuit withstand time (tSC) of 10 microseconds, and a Reverse Bias SOA (RBSOA) specified at 70 A / 1200 V. The TO-247AD industry-standard through-hole package is screw-mountable and provides a low thermal-resistance path, while the gate is protected by a 22 V maximum VGES rating.
The IXSH35N120A uses IXYS's proprietary High Speed PT-IGBT cell architecture, which delivers square Reverse Bias SOA, low tail current during turn-off, and a clamped inductive load rating of 300 A at 1 ms. The high-speed cell structure enables switching frequencies in the 20 kHz to 50 kHz range typical of resonant and hard-switched converters, while the 10 us short-circuit withstand allows designers to use simple desaturation detection protection schemes.
Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drive inverters, induction heating (IH) cooktops, and welding inverters. The wide SOA makes it well-suited for hard-switched bridge topologies where device voltage overshoot during commutation can exceed the bus voltage.
When designing with this device, always observe the RBSOA curve during turn-off with inductive loads and provide a properly sized gate-driver with separate turn-on and turn-off resistors (typically 10 ohm to 47 ohm) plus a tight gate-emitter loop layout. Miller clamping or a negative turn-off bias of -5 V to -15 V is recommended at bus voltages above 800 V to prevent parasitic turn-on from dv/dt coupling.
This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical gate-drive design notes not consolidated in the IXYS datasheet.
Alternatives de remplacement direct pour IXSH35N120A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IXSH35N120B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IXSN35N120AU1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IXGH25N120A
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRG7PH44K10DPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IXSH35N120A Valeurs maximales et caractéristiques électriques
| Type de transistor | IGBT - Single, High Speed |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC25, TC=25C) | 70 A |
| Pulsed Collector Current (ICM, 1 ms) | 300 A |
| Power Dissipation (PC) | 300 W |
| Short-Circuit Withstand Time (tSC) | 10 us (VCE=0.6 VCES, VGE=15 V, RG=22 ohm, Tj<=150C) |
| Reverse Bias SOA (RBSOA) | 70 A / 1200 V (clamped inductive load, 30 mH) |
| Operating Junction Temperature (TJ) | -55C to +150C |
| Storage Temperature (Tstg) | -55C to +150C |
| Boîtier | TO-247AD (through-hole, 3-lead) |
| Type de montage | Through Hole |
Configuration des broches de IXSH35N120A
| Broche 1 | Gate — Gate control input; connect via gate resistor (typically 10-47 ohm) to driver output |
| Broche 2 | Collector — Collector terminal; internally connected to metal mounting tab - high-voltage DC bus switching node |
| Broche 3 | Emitter — Emitter terminal; power ground return for gate-driver Kelvin connection |
Zone de fonctionnement sûr (DC, TC=25C, VGE=15V)
Applications typiques
IXSH35N120A convient pour 6 applications: Induction Heating Cooktop Inverter, Industrial Motor Drive Inverter (480V AC), Uninterruptible Power Supply (UPS) Inverter Stage, Switch-Mode Power Supply (SMPS) for Welding Inverter, Solar PV String Inverter (Three-Phase, 10-25 kW), Battery Charger / EV On-Board Charger (3-Phase).
Induction Heating Cooktop Inverter
The IXSH35N120A is well-suited for resonant half-bridge induction-heating inverters in domestic and commercial cooktops, where it operates at 20-50 kHz switching frequency with a resonant LC tank delivering up to several kW to the induction coil. Its 1200 V VCES comfortably handles 600 V rectified bus voltages plus resonant ringing overshoot, while the High Speed cell architecture minimizes turn-off switching losses that would otherwise dominate total dissipation in this frequency range. The square RBSOA at 70 A / 1200 V ensures reliable turn-off with the inductive load, and the 10 us short-circuit withstand enables simple DESAT protection. Compared to a standard IGBT in the same frequency range, the IXSH35N120A reduces switching losses by approximately 40-50%, allowing smaller heatsinks in space-constrained cooktop designs.
Recommandé
Industrial Motor Drive Inverter (480V AC)
The IXSH35N120A is widely used in industrial three-phase AC induction motor drives and servo drives operating from 480 V AC rectified to a ~680 V DC bus. Its 1200 V VCES rating provides 75% margin over the bus peak, accommodating voltage overshoot from cable inductance and motor back-EMF during regenerative braking. With 70 A IC25, it supports motor continuous currents up to ~30 A per phase after thermal derating, covering drives up to approximately 15 kW. The High Speed cell structure allows switching frequencies up to 20 kHz, reducing motor audible noise and improving current-loop bandwidth for precise servo control. Its square RBSOA is critical for the hard-switched commutation in PWM inverter bridges where device voltage can momentarily exceed the bus.
Recommandé
Uninterruptible Power Supply (UPS) Inverter Stage
The IXSH35N120A is used in the DC-AC inverter stage of online double-conversion UPS systems rated 10 kVA and above, where it converts the rectified 384 V or 480 V DC battery rail to single-phase or three-phase AC output. Its 1200 V VCES handles 480 V bus transients and surge events, while the 70 A IC25 supports UPS outputs up to approximately 30 kVA with appropriate thermal management. The High Speed switching characteristic enables 16-20 kHz PWM frequencies, reducing output filter size and weight for tower UPS enclosures. The 10 us short-circuit withstand time is essential for protecting the inverter against output short-circuit faults, allowing the DESAT detection circuit to clear the fault before device destruction.
Recommandé
Switch-Mode Power Supply (SMPS) for Welding Inverter
The IXSH35N120A is found in the primary-side hard-switched full-bridge inverter of industrial welding machines, where it operates at 20-50 kHz to step down rectified 480 V AC to high welding currents via a HF transformer. The High Speed cell architecture dramatically reduces switching losses compared to standard IGBTs at these frequencies, enabling smaller magnetic components and higher power density. Its 70 A IC25 supports welding currents up to ~250 A average after transformer step-down, while the 1200 V VCES handles the resonant overshoot typical of full-bridge welding topologies. The square RBSOA is critical during arc-strike and arc-extinguish events where the welding load presents highly dynamic, inductive behavior to the inverter.
Recommandé
Solar PV String Inverter (Three-Phase, 10-25 kW)
The IXSH35N120A is used in three-phase string solar inverters in the 10-25 kW power range, where it operates as the DC-AC grid-tie inverter switching the 600-800 V DC bus to 480 V AC three-phase output. Its 1200 V VCES rating accommodates the maximum PV open-circuit voltage at cold ambient plus grid transients, while the High Speed switching enables 16-32 kHz PWM for low-harmonic, grid-compliant output with minimal filter size. The 70 A continuous current rating supports inverter power levels up to 25 kW with appropriate thermal design. The rugged RBSOA is essential for grid-side disturbances such as voltage sags, anti-islanding trip events, and load transients that can momentarily stress the inverter switches beyond normal operating conditions.
Recommandé
Battery Charger / EV On-Board Charger (3-Phase)
The IXSH35N120A is used in three-phase on-board EV chargers (OBC) and high-power industrial battery chargers where it converts 480 V three-phase AC to the DC charging voltage for traction battery packs. Its 1200 V VCES handles rectified 480 V bus plus PFC boost-stage transients, while the 70 A continuous current supports charging power levels above 20 kW. The High Speed cell architecture allows 50-100 kHz switching in PFC boost stages, reducing PFC inductor size and weight - critical for compact on-board packaging. The square RBSOA ensures reliable operation during grid disturbances, load dump events, and the highly dynamic load profile of lithium battery charging profiles.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IXSH35N120A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IXSH35N120B | IXSN35N120AU1 | IXGH25N120A | IRG7PH44K10DPBF |
|---|---|---|---|---|---|
| Package | TO-247AD | TO-247AD - same | TO-247AD - same | TO-247AD - same | TO-247AD - same |
| Brand | IXYS | IXYS | IXYS | IXYS | Infineon |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Collector Current (IC25) | 70 A | 70 A | 70 A | 50 A | 40 A |
| Power Dissipation (PC) | 300 W | 300 W | 300 W | 250 W | 160 W |
| Switching Speed Class | High Speed | High Speed | High Speed | High Speed | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Principaux différenciateurs
- Higher continuous current rating in same package (vs IRG7PH44K10DPBF)
- High Speed cell architecture with square RBSOA (vs Standard IGBTs in 1200V/70A class)
- 10 us short-circuit withstand time enables DESAT protection (vs Lower tSC alternative IGBTs)
Notes de conception
Keep the gate-drive loop (gate resistor + gate-emitter return) physically small, ideally within 1 square inch of the package, to minimize parasitic inductance. At bus voltages above 800 V, add a separate Kelvin emitter connection (pin 3 on TO-247AD) routed directly to the gate-driver ground, not shared with the power-emitter return path. This prevents the gate-drive voltage from being corrupted by the L*di/dt of the power emitter current during switching transients, which can otherwise cause parasitic turn-on or turn-off slowdown.
Always operate the IXSH35N120A within its RBSOA during turn-off with inductive loads. Exceeding the RBSOA (70 A / 1200 V at VGE=15 V) at turn-off can cause latch-up and catastrophic failure even though the device is within its average current rating. For hard-switched bridge topologies, use a snubber or active clamp to keep the device within the SOA during worst-case commutation events such as load transients or short-circuit recovery. Estimate: at VCE=1200 V and IC=70 A with 5 us turn-off, the device dissipates roughly 210 W per switching event - sustained operation above this requires significant thermal derating.
Estimated thermal analysis: at TC=25C and PC=300 W, the TO-247AD package (typical theta_JC=0.25 C/W) requires case temperature monitoring. At continuous 70 A operation in a typical heatsink-mounted scenario (theta_CS=0.1 C/W, theta_SA=0.5 C/W), expect total thermal resistance of ~0.85 C/W from junction to ambient. With 200 W total dissipation (worst-case conduction + switching losses at 20 kHz), junction-to-ambient temperature rise is ~170C above ambient - adequate thermal management is essential. Apply thermal compound, use a clip or screw mount with 0.6-0.8 N*m torque, and consider forced-air cooling for continuous-power applications.
Add a gate-emitter resistor of 10 kohm to 100 kohm between gate and emitter terminals, mounted within 1 cm of the package, to ensure the device stays off during power-up before the gate driver is active. This prevents dv/dt-induced turn-on from Miller coupling, which is a common cause of shoot-through in half-bridge topologies. Use separate gate turn-on (typically 10-22 ohm) and turn-off (typically 10-47 ohm) resistors for independent control of di/dt and dv/dt, and consider adding a small anti-parallel Schottky or TVS clamp between gate and emitter for additional protection.
Informations de conformité
Compliance status not explicitly stated in the provided IXYS datasheet snippet or distributor pages. AEC-Q100 not applicable - this is a power IGBT, not an automotive-qualified IC. Contact IXYS/Littelfuse for specific RoHS, REACH, and conflict minerals compliance certificates.
