LTC4416EMS-1#PBF - 36V Dual Ideal Diode OR Controller | ADI
Référence : LTC4416EMS-1#PBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.98 | $5,98 |
| 10 | $5.42 | $54,20 |
| 100 | $4.86 | $486,00 |
| 500 | $4.38 | $2 190,00 |
| 1 000 | $3.95 | $3 950,00 |
LTC4416EMS-1#PBF Présentation
An ideal diode controller is a power management IC that drives external MOSFETs to emulate a diode with near-zero forward voltage drop. In the power-supply hierarchy, it sits between raw power sources (adapters, batteries, PoE supplies) and the system load, replacing Schottky diodes in power ORing and source-switchover circuits to eliminate diode conduction losses and the associated heat.
Key features include a wide 3.5V to 36V operating range that supports one to eight series Li-Ion cells, a low 35uA per channel quiescent current that is independent of load current, and regulation of the MOSFET forward voltage so conduction loss scales down with load. The LTC4416-1 variant adds fast turn-off of the alternate channel MOSFET when the other device is selected via the enable pins, enabling priority-source switchover behavior.
The architecture drives large external P-channel MOSFETs with controlled gate voltage, forward-regulating each channel to a small setpoint voltage. When a source falls below its regulated forward drop, the MOSFET turns off quickly, providing reverse-current blocking without a discrete diode drop. Because the drop is I*Rds(on) rather than a fixed 0.3-0.5V, self-heating and efficiency losses are dramatically reduced at high currents.
Typical applications include highly efficient ORing of multiple power sources such as adapter/battery switchover in portable instruments, high-power PoE and telecom power feeds, and backup battery holdup systems. The LTC4416E grade is guaranteed from 0C to 85C; the I grade extends to -40C to 125C.
Design consideration: select external P-channel MOSFETs with adequate Vds rating (at least 40V for 36V rails) and low Rds(on), since the controller regulates only the gate drive, not the MOSFET thermal budget.
This page synthesizes distributor pricing, drop-in same-family alternatives, pinout guidance, and practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour LTC4416EMS-1#PBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec LTC4416EMS-1#PBF (même facteur de forme et même empreinte) — différant par Function, Package, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
Aucune alternative de remplacement direct disponible pour ce produit.
Demander des alternativesLTC4416EMS-1#PBF Valeurs maximales et caractéristiques électriques
| Fonction | Dual ideal diode / PowerPath ORing controller |
| Plage de tension d'entrée | 3.5 V to 36 V |
| Number of Channels | 2 |
| External Power Switch | P-channel MOSFET |
| Courant de repos | 35 uA per channel |
| Configuration (LTC4416-1) | 2:2 source selector with fast turn-off of alternate channel |
| Battery Support | 1 to 8 series Li-Ion cells |
| Operating Temperature Range (E grade) | 0C to 85C (guaranteed); -40C to 85C assured by design |
| Boîtier | 10-MSOP (MS10) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant (#PBF suffix = lead-free) |
| Manufacturer | Analog Devices (originally Linear Technology) |
| Application | Power switchover, power supply ORing, PoE power feeds |
| Reverse Current Blocking | Yes (fast MOSFET turn-off) |
| Revision (datasheet 4416FA) | FA per ADI document URL |
Guide de configuration des broches du LTC4416EMS-1#PBF 10-msop (ms10)
Configuration des broches du LTC4416EMS-1#PBF (boîtier 10-msop (ms10)). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour LTC4416EMS-1#PBF.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
LTC4416EMS-1#PBF convient pour 6 applications: Power Supply ORing, Adapter / Battery Switchover, High-Power PoE Power Feeds, Backup Battery Holdup Systems, Industrial 24V Control Systems, Solar and Renewable Input ORing.
Power Supply ORing
The LTC4416EMS-1#PBF controls two sets of external P-channel MOSFETs to create two near-ideal diode functions, enabling highly efficient ORing of multiple power sources. Because the MOSFET forward drop is regulated to a small setpoint rather than a 0.3-0.5V Schottky diode drop, conduction loss falls to I2*Rds(on), extending battery life and cutting self-heating in redundant-supply systems. The 3.5V to 36V operating range covers 5V logic rails through 24V industrial buses and multi-cell Li-Ion stacks, while 35uA per channel quiescent draw keeps standby overhead negligible.
Recommandé
Adapter / Battery Switchover
In portable and industrial instruments powered by both a wall adapter and a Li-Ion battery pack, the LTC4416-1's fast turn-off feature disconnects the battery path the moment the adapter channel is selected via the enable pins, preventing reverse discharge into the battery during transitions. One to eight series Li-Ion cells are supported by the 3.5V to 36V range. The regulated forward voltage keeps the adapter-to-system path efficient at full load, and the low 35uA per channel quiescent current minimizes drain when running from battery alone.
Recommandé
High-Power PoE Power Feeds
Mouser lists this device as a 36V low-loss dual PowerPath controller for large PFETs targeting large PoE power feed (PFE) applications. The controller drives large external P-channel MOSFETs, so power throughput is defined by MOSFET rating rather than the IC, and near-zero forward drop reduces the heat that must be dissipated in dense PoE infrastructure. Dual channels allow ORing of a primary and auxiliary PSE feed with priority selection via the enable pins and fast-off behavior of the LTC4416-1 variant.
Recommandé
Backup Battery Holdup Systems
Server, telecom, and industrial control systems use supercapacitor or battery holdup modules to ride through input dips. The LTC4416EMS-1#PBF ORs the main 24V or 36V rail with the holdup source, forward-regulating each MOSFET so the holdup path engages seamlessly when the main rail sags below regulation. Reverse-current blocking via fast MOSFET turn-off prevents the holdup reservoir from back-feeding the failed main source, preserving ride-through energy exactly where the load needs it.
Recommandé
Industrial 24V Control Systems
Factory automation controllers routinely combine a 24V DIN-rail supply with a locally installed battery or secondary supply. The LTC4416's 36V maximum input covers nominal 24V rails with transient headroom, and the E grade 0C to 85C guaranteed range matches control-cabinet environments. Dual near-ideal diodes allow live swapping of the primary supply without dropping the load, and the I2*Rds(on) conduction loss keeps cabinet thermal load low compared with Schottky ORing diodes at multi-ampere load currents.
Recommandé
Solar and Renewable Input ORing
Off-grid systems combine panel, battery, and generator sources whose voltages vary widely. The 3.5V to 36V operating window and MOSFET-based ORing of the LTC4416EMS-1#PBF let designers parallel diverse sources without diode losses eroding harvested energy at low irradiance. Because quiescent current is a fixed 35uA per channel and independent of load, nighttime or idle drain stays minimal. Selecting MOSFETs with 40V or higher Vds rating protects against open-circuit panel transients on 24V-class arrays.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour LTC4416EMS-1#PBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | LTC4416IMS#PBF | LTC4416EMS#PBF | LTC4416IMS-1#PBF |
|---|---|---|---|---|
| Package | 10-MSOP (MS10) | 10-MSOP (MS10) - same | 10-MSOP (MS10) - same | 10-MSOP (MS10) - same |
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Input Voltage Range | 3.5 V to 36 V | 3.5 V to 36 V | 3.5 V to 36 V | 3.5 V to 36 V |
| Quiescent Current | 35 uA per channel | 35 uA per channel | 35 uA per channel | 35 uA per channel |
| Fast Alternate-Channel Turn-Off (-1 feature) | Yes | No (standard LTC4416) | No (standard LTC4416) | Yes |
| Operating Temperature (guaranteed) | 0C to 85C (E grade) | -40C to 125C (I grade) | 0C to 85C (E grade) | -40C to 125C (I grade) |
| Channel Configuration | 2:2 (dual source selector) | 2:2 | 2:1 (per DigiKey categorization) | 2:2 |
| RoHS / Lead-Free | Compliant (#PBF) | Compliant (#PBF) | Compliant (#PBF) | Compliant (#PBF) |
Principaux différenciateurs
- Fast alternate-channel turn-off for priority switchover (vs LTC4416EMS#PBF)
- Low fixed quiescent current independent of load (vs LTC4416IMS#PBF)
- Trade-off: commercial temperature guarantee only (vs LTC4416IMS-1#PBF)
Notes de conception
Verify the variant suffix before design-in. The standard LTC4416 and the LTC4416-1 share the same package and pinout but differ in behavior: the -1 enables fast turn-off of the off-channel MOSFET when the other device is selected via the enable pins. Designs relying on priority-source switchover must use the -1; substituting the plain LTC4416 can allow reverse current during source transitions. Also note the E grade is guaranteed only from 0C to 85C; -40C to 85C performance is assured by design and characterization, not production test. Use LTC4416IMS-1#PBF for guaranteed extended temperature.
Choose external P-channel MOSFETs with Vds rating of at least 40V to withstand 36V maximum input plus transients, and Rds(on) low enough that I2*Rds(on) stays within the MOSFET thermal budget at full load. The LTC4416 regulates the forward voltage across each MOSFET, so total power capability is set entirely by the external MOSFET, not the controller. Estimate: at 5A with a 20mOhm MOSFET, conduction loss is about 0.5W per path versus roughly 2W for a 0.4V Schottky diode - a 4x heat reduction.
Place the sense connections directly at the MOSFET drain and source terminals with short, wide Kelvin traces so the controller regulates the true forward voltage rather than trace drop. Keep the GATE drive loops compact to limit ringing during the fast turn-off transitions of the LTC4416-1. Decouple the supply pin with at least 0.1uF ceramic close to the IC. Provide generous copper pour under the MOSFET drain/source pads since the MOSFETs, not the controller, carry the load current and heat.
Informations de conformité
The #PBF suffix denotes Analog Devices Pb-free/RoHS-compliant packaging. REACH, halogen-free, and conflict-minerals declarations not found in provided data; consult ADI quality documentation.
