MRF5S9150HR5 - 880MHz 33W RF Power LDMOS | NXP
Référence : MRF5S9150HR5 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88.5 | $885,00 |
| 100 | $81.2 | $8 120,00 |
| 500 | $74 | $37 000,00 |
| 1 000 | $67.5 | $67 500,00 |
MRF5S9150HR5 Présentation
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a type of power MOSFET that has become the dominant transistor technology for high-frequency, high-power RF amplification. LDMOS devices combine a lateral current path with a lightly-doped drift region, which raises the breakdown voltage while preserving excellent high-frequency gain. Within the broader semiconductor taxonomy, LDMOS sits under RF power transistor -> power MOSFET -> discrete semiconductor, and it specifically displaced older bipolar and Si LDMOS solutions in cellular base-station amplifiers because of its high gain, broad bandwidth, and simplified bias requirements.
Key differentiating features include a typical power gain of 19.7 dB at 880 MHz, 33 W CW output power capability, integrated electrostatic discharge (ESD) protection, and an internal input matching network that simplifies PCB design. The NI-780H-2L ceramic package provides a low thermal resistance path, enabling continuous-wave operation at full output power with appropriate heatsinking. Two flange-through mounting holes allow direct bolting to a copper spreader or heatsink for chassis-mounted amplifier designs.
The MRF5S9150HR5 uses NXP's HV5 (high-voltage fifth generation) LDMOS process, which targets higher breakdown voltage (68 V) than competing 50 V RF MOSFETs. This additional voltage margin permits higher load VSWR tolerance, simplifies bias network design, and improves reliability under output mismatch conditions commonly encountered in broadcast amplifiers and RF generators.
Typical applications include 900 MHz digital and analog radio links, GSM base-station power amplifiers, RFID readers, industrial RF heating, UHF TV transmitters, and avionics telemetry. The 880 MHz tuning point makes it particularly well suited to cellular bands below 1 GHz and to licensed UHF industrial/scientific/medical (ISM) systems.
Designers should note that thermal management is critical: at 33 W CW output into a mismatched load, drain efficiency must be considered and a substantial copper spreader or forced-air cooling is recommended. The integrated ESD protection eliminates the need for external Zener clamps at the gate, simplifying PCB layout.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not consolidated on a single manufacturer datasheet, providing engineers with the cross-reference and selection information needed for sourcing and second-source decisions.
Alternatives de remplacement direct pour MRF5S9150HR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5S9100HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S9150HSR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S9200HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S9080HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S9150HR5 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS (RF Power MOSFET) |
| Frequency | 880 MHz (typical), 700-1000 MHz band |
| Drain-Source Breakdown Voltage (Vdss) | 68 V |
| Test Condition Voltage | 28 V |
| Test Condition Current | 1.5 A |
| Output Power (Pout) | 33 W CW |
| Power Gain | 19.7 dB (typ at 880 MHz, 28 V) |
| Boîtier / Format | NI-780H-2L (ceramic flange) |
| Supplier Device Package | NI-780 |
| Type de montage | Chassis Mount / Flange |
| Technology | HV5 LDMOS (High-Voltage 5th Generation) |
| Operating Mode | Class AB (typical) |
| Input Matching | Internal input matching network |
| ESD Protection | Integrated |
| Part Status | Obsolete |
| Manufacturer | NXP (formerly Freescale Semiconductor) |
Configuration des broches de MRF5S9150HR5
| Broche 1 | DRAIN — RF output / drain, top ceramic pad |
| Broche 2 | GATE — RF input / gate, flange-side lead |
| Broche 3 | SOURCE — DC ground / source, mounting flange |
DC Zone de fonctionnement sûr (estimate)
Applications typiques
MRF5S9150HR5 convient pour 6 applications: GSM 900 MHz Base-Station Power Amplifier, UHF TV Transmitter Final Stage, RFID Reader Transmitter (UHF 900 MHz), Industrial RF Heating / Drying, Two-Way Radio Repeater Amplifier, Avionics Telemetry / Drone Data Link.
GSM 900 MHz Base-Station Power Amplifier
The MRF5S9150HR5 is well matched to GSM 900 base-station final-stage PA designs where 880 MHz operation, 33 W output power, and 19.7 dB gain reduce the driver-stage bill of materials. Its HV5 LDMOS architecture provides the ruggedness required for constant-envelope GSM signals and the load-mismatch tolerance demanded by base-station specifications. Designers can place the device at the output of a Class AB bias network fed by a 28 V switching regulator and rely on the integrated ESD protection to eliminate external gate Zener clamps.
Recommandé
UHF TV Transmitter Final Stage
For UHF analog and digital TV transmitters operating in the 470-860 MHz band, the MRF5S9150HR5's 33 W CW capability, 68 V breakdown, and high gain make it a strong candidate for the final PA stage in low-power gap-fillers or translator exciters. The 880 MHz tuning is high enough to support UHF channel 54-69 with appropriate output matching network redesign. The ceramic NI-780H-2L flange package permits direct bolting to a chassis-mounted heatsink required for continuous-duty broadcast operation.
Recommandé
RFID Reader Transmitter (UHF 900 MHz)
The MRF5S9150HR5 can drive UHF RFID reader transmitters in the 860-960 MHz band with 33 W CW output, enabling read ranges beyond 10 m with appropriate antenna gain. The 19.7 dB power gain permits a low-power upstream driver (e.g., a small-signal MMIC) to fully modulate the final PA. The 68 V breakdown provides margin against antenna-port ESD events typical in field-deployed RFID readers at logistics gates.
Recommandé
Industrial RF Heating / Drying
Industrial RF heating systems operating near 900 MHz for plastic welding, food drying, or textile processing benefit from the MRF5S9150HR5's 33 W continuous-wave rating and ceramic flange thermal performance. The HV5 process handles the high VSWR conditions that occur when the workpiece dielectric constant varies during the heating cycle. The chassis-mount package simplifies integration into industrial RF generator cabinets with forced-air cooling.
Recommandé
Two-Way Radio Repeater Amplifier
Licensed two-way radio repeaters operating in the 800/900 MHz public-safety bands (e.g., 806-869 MHz, 896-901 MHz) can use the MRF5S9150HR5 in the final PA stage where 33 W output extends talk-in range. The 19.7 dB gain simplifies the receive/transmit switching and driver chain. The rugged 68 V breakdown provides margin against antenna disconnection events in mobile repeater deployments.
Recommandé
Avionics Telemetry / Drone Data Link
Unmanned aerial vehicle (UAV) telemetry and drone command/data links in the 900 MHz amateur and industrial bands can use the MRF5S9150HR5 as a final-stage PA where 33 W output extends the ground-station link margin. The high breakdown voltage provides headroom for the variable VSWR encountered with airframe-mounted antennas. Note that the chassis-mount ceramic package is best suited to ground-station transmitters rather than airframe units.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S9150HR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5S9100HR5 | MRF5S9150HSR5 | MRF5S9200HR5 | MRF5S9080HR5 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (ceramic flange) | NI-780H-2L - same | NI-780S - same family, surface-mount | NI-780H-2L - same | NI-780H-2L - same |
| Tuning Frequency | 880 MHz | 900 MHz | 880 MHz | 920 MHz | 900 MHz band |
| Output Power | 33 W CW | 33 W CW | 33 W CW | 33 W CW | 33 W CW |
| Power Gain | 19.7 dB | 19.7 dB | 19.7 dB | 19.5 dB | 19.5 dB |
| Drain Voltage (test) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Quiescent Current | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
| Breakdown Voltage (Vdss) | 68 V | 68 V | 68 V | 68 V | 68 V |
| Process Technology | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS | HV5 LDMOS |
| Lifecycle Status | Obsolete | Obsolete (same family) | Obsolete (same family) | Obsolete (same family) | Obsolete (same family) |
Principaux différenciateurs
- 880 MHz factory-tuned for direct deployment in 900 MHz ISM cellular and proprietary bands (vs MRF5S9100HR5 (900 MHz tuning))
- Chassis-mount NI-780H-2L flange package for highest thermal performance (vs MRF5S9150HSR5 (NI-780S surface-mount))
- 68 V HV5 process breakdown for superior load-mismatch ruggedness (vs Generic 50 V RF MOSFET competitors)
Notes de conception
Estimated: at 33 W CW RF output, 28 V drain, and 50% drain efficiency the device dissipates roughly 33 W internally. The NI-780H-2L ceramic flange must be bolted to a copper spreader using thermal compound (e.g., Wakefield Type 120 or Shin-Etsu X-23-7762), and the spreader should be attached to a forced-air-cooled heatsink capable of holding the case below 100 C at full power. Without active cooling the junction temperature will quickly exceed the 200 C maximum and cause irreversible damage.
The drain pad on the top ceramic surface must be soldered or epoxied to a 50 ohm microstrip or stripline trace on the RF output PCB. Use a low-loss substrate (Rogers RO4003C or RO4350B) at 20-32 mil thickness to handle the high RF voltage swing. Keep the gate bias traces away from the drain trace and add a quarter-wave stub at the drain bias feed to prevent RF leakage into the DC supply. The input matching network should follow the reference design in the NXP application note for the MRF5S9000 family.
Do not bias the MRF5S9150HR5 without RF drive applied at full quiescent current - Class AB bias at 1.5 A idle with no RF input will dissipate 42 W DC and quickly overheat the device. Always ramp the RF drive after bias stabilization. Also note that the NI-780H-2L ceramic contains beryllium oxide (BeO) which is safe in operation but produces toxic dust if machined or crushed - do not grind, sand, or break the ceramic body. Dispose of damaged parts as hazardous waste per local regulations.
Place the drain bias feed network (RFC + bypass capacitors) within 5 mm of the drain lead to minimize parasitic inductance that can cause oscillation at 800-900 MHz. Use a 100 pF and 10 nF bypass capacitor in parallel directly at the drain feed for broadband decoupling. Star-ground the source flange to the chassis ground with multiple short vias or screws to minimize common-source inductance which degrades gain and stability.
Informations de conformité
The NI-780H-2L ceramic flange package typically qualifies for RoHS exemption 7(a) for high-temperature solder in internal interconnect layers. The ceramic body contains beryllium oxide (BeO) which is hazardous if machined. Compliance status not explicitly stated in the verified web data - consult NXP's material declaration for definitive RoHS/REACH status.