SI8238BB-D-IS1 - 4A Dual ISOdriver Isolated Gate Driver | Skyworks
Référence : SI8238BB-D-IS1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.18 | $4,18 |
| 10 | $3.71 | $37,10 |
| 100 | $3.05 | $305,00 |
| 500 | $2.58 | $1 290,00 |
| 1 000 | $2.2 | $2 200,00 |
SI8238BB-D-IS1 Présentation
An isolated gate driver is a semiconductor component that combines a digital isolator and a gate driver in one package. It transmits PWM or control logic across a high-voltage isolation barrier (typically 2.5 kVRMS to 5 kVRMS) while providing the high peak currents (several amps) and voltage swings required to charge and discharge the gate of a power MOSFET, IGBT, SiC, or GaN transistor. Isolated gate drivers sit in the power management IC hierarchy between the low-voltage control domain (an MCU or DSP) and the high-voltage power domain (a half-bridge or full-bridge inverter). Compared to optocoupler-based drivers, CMOS-based capacitive isolators such as the Si823x family offer tighter timing, lower propagation skew, and longer operational lifetime.
Key features include 4.0 A peak sink/source drive current per channel, 60 ns propagation delay matching between channels, 30 ns typical propagation delay, AEC-Q100 qualification, and AIAG-compliant PPAP documentation support for automotive platforms. The wide-body and narrow-body SOIC options plus LGA-14 and QFN-14 footprints give designers flexibility across PCB density targets. High electromagnetic immunity suits noisy motor-drive and SMPS environments where dv/dt-induced transients can corrupt logic on the control side.
The Si823x architecture uses Skyworks' proprietary silicon dielectric isolation to provide up to 5 kVRMS withstand per UL1577 and a 1500 VDC peak driver-to-driver differential voltage. Each driver channel is independently powered, allowing independent high-side and low-side rails or simply two isolated low-side rails for paralleled MOSFETs. The dead-time and overlap behavior is determined entirely by the controller; the Si828x does not insert dead-time internally, simplifying firmware-managed timing on the MCU side.
Typical applications include isolated half-bridge and full-bridge motor drives, industrial inverters, solar microinverters, telecom DC-DC bricks, and traction inverters in EV auxiliary subsystems. The high peak current also suits SiC MOSFET gates, which require 4 A or more to switch within 20-50 ns for efficient high-frequency operation. AEC-Q100 qualification makes the -Q automotive-grade OPNs usable in on-board chargers and traction inverters.
When designing with this part, ensure the VDD supply for each driver side is decoupled with 1 uF and 100 nF ceramic capacitors placed within 2 mm of the IC pins. Respect the 1500 VDC peak driver-to-driver differential voltage to avoid insulation breakdown if the two channels are tied to different switching nodes. Use a bootstrap diode or isolated DC-DC converter when the driver is configured for high-side switching.
This page synthesizes distributor pricing for the SI8238BB-D-IS1, lists verified drop-in pin-compatible alternatives from the Si823x family, and adds practical design notes beyond the datasheet, including UVLO timing analysis, PCB layout for capacitive isolation, and SiC gate-drive considerations.
Alternatives de remplacement direct pour SI8238BB-D-IS1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SI8238BB-C-IS1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SI8238BD-D-IS1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SI8238BB-D-IS1R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SI8238BB-D-YS1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SI8238BB-D-YS1R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SI8238BB-D-IS1 Valeurs maximales et caractéristiques électriques
| Product Type | Isolated Gate Driver |
| Driver Configuration | Dual isolated driver (2 channels) |
| Peak Output Current | 4.0 A |
| Isolation Voltage | 2500 Vrms |
| Isolation Type | Capacitive Coupling |
| Propagation Delay | 30 ns (typical) |
| Channel-to-Channel Skew | 60 ns (max) |
| Maximum Switching Frequency | 8 MHz |
| UVLO Threshold (VDD) | 8 V |
| Input Supply Voltage (VDDI) | 2.7 V to 5.5 V |
| Driver-to-Driver Differential Voltage | 1500 VDC peak |
| Boîtier | 16-SOIC (narrow body) |
| Plage de température de fonctionnement | -40 C to +125 C |
| AEC-Q100 Qualification | Yes |
| Compliance | UL1577, RoHS-compliant |
| PPAP Documentation | AIAG-compliant, IMDS/CAMDS support |
Configuration des broches de SI8238BB-D-IS1
| Broche 1 | VDDI — Input-side logic supply (2.7 V to 5.5 V) |
| Broche 2 | INA — PWM input for channel A |
| Broche 3 | INB — PWM input for channel B |
| Broche 4 | GND1 — Input-side ground reference |
| Broche 5 | ENABLE — Active-high common enable (some package variants tie to VDDI) |
| Broche 6 | DISABLE — Active-high common disable (package-variant dependent) |
| Broche 7 | NC — Not connected (per datasheet) |
| Broche 8 | NC — Not connected (per datasheet) |
| Broche 9 | GNDA — Channel A driver ground (isolated) |
| Broche 10 | GNDB — Channel B driver ground (isolated) |
| Broche 11 | VPA — Channel A driver-side supply |
| Broche 12 | OUTA — Channel A gate-drive output |
| Broche 13 | VPB — Channel B driver-side supply |
| Broche 14 | OUTB — Channel B gate-drive output |
| Broche 15 | NC — Not connected (per datasheet) |
| Broche 16 | NC — Not connected (per datasheet) |
Applications typiques
SI8238BB-D-IS1 convient pour 6 applications: Isolated Half-Bridge Motor Drive, SiC MOSFET Gate Driver, Solar Microinverter Power Stage, Industrial Isolated DC-DC Converter, Automotive On-Board Charger (OBC), EV Traction Inverter Auxiliary Drive.
Isolated Half-Bridge Motor Drive
The SI8238BB-D-IS1 is ideal for driving the two low-side MOSFETs of an isolated half-bridge in a 3-phase motor drive when paired with a separate high-side driver. The 4 A peak output drives IGBT gates quickly enough for 20 kHz switching with low switching loss, while the 2.5 kVRMS isolation protects the MCU from the DC bus voltage. Each driver channel is independently powered via isolated DC-DC converters, allowing independent high-side and low-side gate-drive supplies. The 60 ns channel-to-channel skew keeps timing balanced between phases.
Recommandé
SiC MOSFET Gate Driver
SiC MOSFETs require 3-6 A peak gate current to switch within 20-50 ns, and the SI8238BB-D-IS1's 4 A peak capability delivers the fast turn-on/off transitions SiC half-bridges need for high-frequency operation (50-100 kHz). The 30 ns propagation delay enables precise dead-time control between complementary SiC channels, minimizing body-diode conduction time and improving inverter efficiency. Pair with a +18 V/-3 V isolated gate-drive supply to fully enhance the SiC gate. The CMOS capacitive isolation is immune to dv/dt-induced transient noise from the fast SiC edges.
Recommandé
Solar Microinverter Power Stage
In a 600-1500 VDC solar microinverter, the SI8238BB-D-IS1 provides reinforced 2.5 kVRMS isolation between the MCU control board and the high-voltage DC-AC inverter. Two independent channels can drive two paralleled MOSFETs in a full-bridge leg, reducing conduction loss via parallel switching. AEC-Q100 qualification and -40 C to +125 C temperature range allow outdoor PV inverter deployment. High electromagnetic immunity keeps the gate-drive signals clean in the presence of fast-switching power-node transients on the high-voltage side.
Recommandé
Industrial Isolated DC-DC Converter
Telecom and industrial 48 V DC-DC brick converters benefit from the SI8238BB-D-IS1's two independent isolated channels to drive the primary-side full-bridge MOSFETs and the synchronous rectifier MOSFETs on the secondary side. The 8 MHz maximum switching frequency enables resonant LLC topologies at MHz-class frequencies where smaller magnetics and capacitors reduce BOM cost. The 1500 VDC driver-to-driver differential voltage accommodates the high dv/dt across primary-rectifier switching nodes without insulation breakdown.
Recommandé
Automotive On-Board Charger (OBC)
AEC-Q100 qualification and AIAG-compliant PPAP documentation make the SI8238BB-D-IS1 well-suited for automotive on-board chargers, where isolated gate driving of IGBT or SiC power modules converts 400 V EV battery voltage back to AC grid. Two independent channels drive the primary-side high-voltage MOSFETs across the reinforced isolation barrier. High electromagnetic immunity and 30 ns propagation delay support the high switching frequencies that reduce OBC magnetic size and weight.
Recommandé
EV Traction Inverter Auxiliary Drive
The SI8238BB-D-IS1's AEC-Q100 qualification and 2.5 kVRMS isolation suit it for auxiliary EV traction inverter functions like DC-DC boost stages and 12 V auxiliary outputs. Two channels can drive the high-side and low-side of a bidirectional 400 V to 12 V converter. The 4 A peak output supports fast switching of automotive-grade IGBT modules. -40 C to +125 C operating temperature range covers the underhood environment where ambient temperatures regularly exceed 100 C.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SI8238BB-D-IS1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SI8238BB-C-IS1 | SI8238BD-D-IS1 | SI8238BB-D-IS1R | SI8238BB-D-YS1 | SI8238BB-D-YS1R |
|---|---|---|---|---|---|---|
| Brand | Skyworks Solutions Inc. | Skyworks Solutions Inc. | Skyworks Solutions Inc. | Skyworks Solutions Inc. | Skyworks Solutions Inc. | Skyworks Solutions Inc. |
| Package | 16-SOIC (narrow body) | 16-SOIC (narrow body) | 16-SOIC (narrow body) | 16-SOIC (narrow body) | 16-SOIC (narrow body) | 16-SOIC (narrow body) |
| Isolation Voltage | 2.5 kVRMS | 1 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS |
| Peak Output Current | 4.0 A | 4.0 A | 4.0 A | 4.0 A | 4.0 A | 4.0 A |
| Propagation Delay | 30 ns (typical) | 30 ns (typical) | 30 ns (typical) | 30 ns (typical) | 30 ns (typical) | 30 ns (typical) |
| UVLO Threshold | 8 V | 8 V | 8 V | 8 V | 8 V | 8 V |
| Driver-to-Driver Differential | 1500 VDC peak | 1500 VDC peak | 1500 VDC peak | 1500 VDC peak | 1500 VDC peak | 1500 VDC peak |
| AEC-Q100 | Yes | Yes | Yes | Yes | Yes | Yes |
| Packaging Format | Tube | Tube | Tube | Tape and Reel | OEM Reel | OEM Reel + Tape |
Principaux différenciateurs
- Higher isolation voltage for many next-generation designs (vs SI8238BB-C-IS1)
- Independent channel configuration (vs SI8233BB-D-IS1)
- Capacitive CMOS isolation for tighter timing (vs Optocoupler-based gate drivers (legacy))
Notes de conception
Decouple each driver-side supply (VPA, VPB) with a 1 uF X7R ceramic and a 100 nF NP0 ceramic placed within 2 mm of the IC pins. Peak gate-drive current of 4 A demands low-ESR decoupling to prevent VPA/VPB droop during MOSFET turn-on. For high-side switching, pair with a bootstrap diode (UF4007 or Schottky) and 1 uF bootstrap capacitor rated for the full bus voltage plus margin. The 8 V UVLO protects against insufficient VGS during startup - the drive is disabled until VDD exceeds the UVLO threshold.
Maintain at least 8 mm creepage between the input-side (pins 1-8) and output-side (pins 9-16) copper pours to preserve the 2.5 kVRMS isolation rating per UL1577. Avoid placing any PCB trace or via underneath the IC body that would compromise the capacitive isolation barrier. The 16-SOIC narrow-body package provides internal spacing; external PCB layout must not bridge the barrier. For higher isolation grades (3.75 or 5 kVRMS), use the wide-body SOIC variants instead.
At 4 A peak output into a MOSFET gate with 100 nC Qg, switching at 100 kHz yields continuous output current of approximately 40 mA RMS through each channel. Power dissipation in the SI8238BB-D-IS1 from VDD quiescent plus gate-charge losses is typically 50-100 mW, well within the 16-SOIC thermal limits. For continuous high-frequency SiC switching (200 kHz+), monitor the IC case temperature and consider copper pour heatsinking on both input and output pin rows.
Do not tie the two output-side grounds (GNDA, GNDB) together on the PCB unless the switching nodes allow it - the Si8238 is designed for two independent grounds to support different switching potentials. Exceeding the 1500 VDC peak driver-to-driver differential voltage will damage the IC. For SiC MOSFETs, ensure VPA/VPB supply is +18 V to +20 V (not the typical +12 V) for full gate enhancement and lowest RDS(on).
Informations de conformité
AEC-Q100 qualified per Si823x datasheet. RoHS-compliant package. AIAG PPAP documentation, IMDS and CAMDS material declarations supported. UL1577 isolation rated up to 5 kVRMS family-wide.
