SN6505ADBVR - 1A Low-Noise Transformer Driver | Texas Instruments
Référence : SN6505ADBVR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.92 | $1,92 |
| 10 | $1.73 | $17,30 |
| 100 | $1.54 | $154,00 |
| 500 | $1.38 | $690,00 |
| 1 000 | $1.21 | $1 210,00 |
SN6505ADBVR Présentation
A transformer driver is a power management IC that converts a low-voltage DC rail into a high-frequency AC waveform capable of exciting a small signal transformer, which then provides galvanic isolation between input and output. Transformer drivers are a sub-category of power management ICs that sit upstream of small isolated converters, typically paired with a secondary-side LDO or Schottky rectifier to create a complete isolated supply. The SN6505 family targets applications where PCB area, low EMI, and minimal external component count are critical design constraints.
Key features of the SN6505ADBVR include an internal soft-start to limit inrush current, spread-spectrum clocking for reduced EMI peaks, and very low on-resistance of 0.25 Ω max at 4.5 V supply, which minimizes driver-stage power loss. The push-pull architecture provides symmetric drive to the primary winding, and the device integrates thermal shutdown and overcurrent protection. The internal MOSFET pair supports 1 A peak switching current at 5 V supply, sufficient to deliver approximately 5 W of isolated output power with commonly available small-signal transformers.
The SN6505A uses an internal oscillator with options at 160 kHz (this variant, 'A' suffix) and 410 kHz (other family members) to balance transformer size against switching losses. The 160 kHz version is favored for low-EMI designs where reduced conducted and radiated emissions are required, particularly in industrial sensor interfaces and medical patient-isolation circuits. The driver drives two external low-side MOSFETs in a push-pull configuration across the transformer's center-tapped primary, providing a differential AC excitation that the secondary then rectifies.
Typical end applications for the SN6505ADBVR include isolated IGBT/MOSFET gate-drive supplies, isolated analog front-end (AFE) power for 4-20 mA loops, RS-485/RS-232 isolation interfaces, and small-form-factor medical device bias. It is also commonly used in industrial PLC digital input isolation and current-sensing front ends where functional or reinforced isolation is required between the field side and the controller.
When designing with the SN6505ADBVR, pay close attention to transformer selection: primary inductance, saturation current, and turns ratio together determine the available isolated output voltage and power. Place the device and the transformer on the same PCB layer with short, wide traces to minimize leakage inductance, and add a 1 µF to 10 µF ceramic bypass capacitor close to the VCC pin. The internal oscillator frequency sets the transformer's minimum operating frequency, so verify the chosen transformer is rated for operation at 160 kHz (or the higher 410 kHz variant if used).
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, supporting rapid component selection for isolated-power designs.
Alternatives de remplacement direct pour SN6505ADBVR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec SN6505ADBVR (même facteur de forme et même empreinte) — différant par Internal Oscillator Frequency, Operating Temperature Range, Soft Start, Topology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SN6505BDBVR
✅ Remplacement direct✓ En stock
$0.28 / unité
Voir la fiche technique →SN6505ADBVT
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6505BDBVT
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6505CDBVR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6505DDBVR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6505ADBVR Valeurs maximales et caractéristiques électriques
| Product Type | Push-pull transformer driver |
| Plage de tension d'entrée | 2.25 V to 5.5 V |
| Output Drive Current | 1 A at 5 V supply |
| On-Resistance (RON) | 0.25 Ω max at 4.5 V supply |
| Internal Oscillator Frequency | 160 kHz |
| Démarrage progressif | Internal |
| EMI Feature | Spread spectrum clocking |
| Boîtier | SOT-23-6 (DBV) |
| Nombre de broches | 6 |
| Plage de température de fonctionnement | -55°C to +125°C |
| Topologie | Push-pull, center-tap primary |
| Protection Features | Thermal shutdown, overcurrent |
| Type de montage | Surface Mount |
| Niveau MSL | 1 |
| Statut RoHS | Compliant |
Configuration des broches de SN6505ADBVR
| Broche 1 | GND — Ground reference for the device |
| Broche 2 | D1 — Drive output 1 - connects to one end of the transformer primary |
| Broche 3 | D2 — Drive output 2 - connects to the other end of the transformer primary |
| Broche 4 | VCC — Input supply voltage (2.25 V to 5.5 V) |
| Broche 5 | NC — Not connected (per datasheet) |
| Broche 6 | EN — Enable input (active high) |
Applications typiques
SN6505ADBVR convient pour 6 applications: Isolated IGBT/MOSFET Gate Drive Supply, Isolated RS-485/RS-232 Interface Power, Medical Patient-Isolation Bias Supply, Isolated Analog Front-End (AFE) for 4-20 mA Loops, Industrial PLC Digital Input Isolation, Isolated Current-Sense Amplifier Bias.
Isolated IGBT/MOSFET Gate Drive Supply
The SN6505ADBVR provides bias power to an isolated gate driver through a small center-tapped transformer, eliminating the need for a high-side bootstrap on the driver. Its 1 A peak drive and 0.25 Ω RON deliver the gate-charge current required by medium-voltage IGBTs in motor-control and inverter designs. Spread-spectrum clocking reduces common-mode EMI on the gate-driver output, which is critical when the gate drive is referenced to a switching node above 600 V. The internal soft-start limits inrush into the transformer primary during power-up, preventing saturation and false triggering on the high-voltage side. This makes it ideal for three-phase inverter gate-drive bias in industrial drives and solar inverters.
Recommandé
Isolated RS-485/RS-232 Interface Power
The SN6505ADBVR generates a small isolated 3.3 V or 5 V rail for an RS-485 or RS-232 transceiver on the field side of an industrial network. Its 160 kHz oscillator produces low conducted emissions, which is essential when the interface is located near noise-sensitive analog sensor inputs. Combined with a 1:1 or 1:1.33 transformer and a secondary-side LDO, the SN6505ADBVR provides the galvanic isolation required by IEC 61800-3 for industrial motor-control networks. The wide 2.25 V to 5.5 V input allows direct connection to the controller's 3.3 V or 5 V logic supply without additional regulation. This is the standard topology for isolated serial ports in PLCs and process-control equipment.
Recommandé
Medical Patient-Isolation Bias Supply
The SN6505ADBVR is well suited to medical devices requiring patient-isolation barriers per IEC 60601-1. Its 160 kHz oscillator and spread-spectrum clocking minimize EMI near sensitive analog front-ends measuring ECG, EEG, or pulse oximetry signals. The push-pull topology provides reinforced isolation through a small isolation transformer with 4 kV or higher isolation ratings from vendors such as Würth or Coilcraft. Low on-resistance (0.25 Ω) keeps the primary-side dissipation under 250 mW at typical loads, which simplifies thermal management in compact patient-monitoring wearables. Internal thermal shutdown and short-circuit protection provide the fault tolerance required for medical-grade equipment.
Recommandé
Isolated Analog Front-End (AFE) for 4-20 mA Loops
In 4-20 mA current-loop sensor conditioning, the SN6505ADBVR provides the isolated power rail required to bias a sensor-side op-amp and 16-bit ADC. Its low 4.5 V RON enables efficient delivery of up to 5 W into the secondary for loop excitation, eliminating the need for loop-powered regulators. The 160 kHz operating frequency simplifies transformer selection and reduces magnetizing current losses, improving overall efficiency at the typical 4 mA loop standby. Spread-spectrum clocking helps pass stringent industrial conducted-emissions tests (EN 55011/CISPR 11) for process-control transmitters. This topology is standard in smart-transmitter designs and field-mounted process controllers.
Recommandé
Industrial PLC Digital Input Isolation
The SN6505ADBVR creates a small isolated bias rail for the field side of a 24 V PLC digital input module. Its wide 2.25 V to 5.5 V input accepts the PLC backplane 5 V rail directly, while its output drives a 1:1 transformer and a secondary-side Schottky rectifier to produce an isolated 5 V or 3.3 V for optocoupler LED bias. The internal soft-start prevents input-voltage transients on the backplane during module hot-plug events. This topology is widely adopted in modular I/O systems where each channel requires its own galvanic isolation barrier for surge-withstand (1 kV to 2.5 kV) per IEC 61131-2. The small SOT-23-6 footprint allows 8 or 16 isolated channels per module.
Recommandé
Isolated Current-Sense Amplifier Bias
The SN6505ADBVR provides bias to an isolated current-sense amplifier that measures shunt current on the high-voltage side of a motor drive or solar MPPT. Its 0.25 Ω RON enables efficient switching of the small 1:1 transformer, while the 160 kHz oscillator sits comfortably above the AM broadcast band to avoid RF interference. Spread-spectrum clocking further reduces EMI peaks in conducted-emissions scans. The isolated bias rail allows the current-sense amplifier (such as AMC1301) to operate with its input common-mode at the high-voltage bus voltage, providing reinforced-isolation per IEC 61800-5-1. This is a standard topology in servo drives and EV onboard chargers.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SN6505ADBVR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SN6505BDBVR | SN6505ADBVT | SN6505BDBVT | SN6505CDBVR | SN6505DDBVR |
|---|---|---|---|---|---|---|
| Package | SOT-23-6 (DBV) | SOT-23-6 (DBV) - same | SOT-23-6 (DBV) - same | SOT-23-6 (DBV) - same | SOT-23-6 (DBV) - same | SOT-23-6 (DBV) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Input Voltage Range | 2.25 V to 5.5 V | 2.25 V to 5.5 V | 2.25 V to 5.5 V | 2.25 V to 5.5 V | 2.25 V to 5.5 V | 2.25 V to 5.5 V |
| Internal Oscillator Frequency | 160 kHz | 410 kHz | 160 kHz | 410 kHz | External clock | 160 kHz (D variant) |
| Output Drive Current | 1 A at 5 V | 1 A at 5 V | 1 A at 5 V | 1 A at 5 V | 1 A at 5 V | 1 A at 5 V |
| RON (max at 4.5 V) | 0.25 Ω | 0.25 Ω | 0.25 Ω | 0.25 Ω | 0.25 Ω | 0.25 Ω |
| Spread Spectrum Clocking | Yes | Yes | Yes | Yes | Yes | Yes |
| Enable Pin | Yes (active high) | Yes (active high) | Yes (active high) | Yes (active high) | Yes (active high) | Yes (active low) |
| Reel Quantity | 3000 | 3000 | 250 | 250 | 3000 | 3000 |
Principaux différenciateurs
- Lowest operating frequency in SN6505 family for lowest EMI (vs SN6505BDBVR)
- Higher drive current than legacy SN6501 family (vs SN6501QDBVRQ1)
- Integrated spread-spectrum clocking reduces EMI peaks (vs SN6501QDBVRQ1)
Notes de conception
Place a low-ESR 1 µF to 10 µF ceramic bypass capacitor as close as possible to the VCC pin (pin 4) and the GND pin (pin 1) of the SN6505ADBVR. The VCC rail carries high di/dt transients at the 160 kHz switching frequency; an undersized or distant capacitor causes large voltage ripple on VCC that can corrupt the internal timing and trigger false undervoltage lockout events. A 0.1 µF ceramic in parallel is recommended for high-frequency decoupling. The total input capacitance should be sized to handle the peak inrush current during transformer start-up.
Route the two driver outputs (D1 at pin 2 and D2 at pin 3) to the transformer primary with minimum loop inductance - traces should be short, wide, and parallel, ideally on the same PCB layer with a continuous ground return directly beneath. Excessive leakage inductance in the primary loop causes voltage spikes that can exceed the absolute maximum drain rating of the internal MOSFETs. Keep the area of the switching loop (D1-primary-D1-return or D2-primary-D2-return) to a minimum to reduce radiated EMI and avoid coupling noise into adjacent analog circuits.
At 5 V VCC, 1 A peak current, and 0.25 Ω RON, the SN6505ADBVR dissipates up to 250 mW at full load in the SOT-23-6 package (theta_JA approximately 200 °C/W). This results in a junction temperature rise of about 50 °C above ambient, well within the 125 °C maximum. However, sustained operation at the absolute maximum drive current at high ambient (>85 °C) leaves limited thermal margin - verify junction temperature using the theta_JA value and the application note SLUAEO9 (TI's SN6505 thermal analysis) for production designs. The small package dissipates heat primarily through the GND pin, so a substantial ground pour beneath the device is essential.
Do not select a transformer whose saturation current rating (Isat) is less than the peak primary current. At 1 A drive and 160 kHz, the magnetizing current builds each half-cycle - if the transformer saturates before the end of a half-cycle, the D1/D2 outputs collapse and may exceed their absolute maximum ratings. Always verify the transformer primary inductance (typically 100 µH to 1 mH for this part) and Isat (>= 1 A) match the SN6505A application requirements. The TI application note SLUAEO9 provides a transformer selection worksheet that accounts for primary inductance, turns ratio, and saturation margin.
