SQ2325ES-T1_GE3 - P-Ch 150V 840mA AEC-Q101 MOSFET | Texas Instruments
Référence : SQ2325ES-T1_GE3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.42 | $42,00 |
| 500 | $0.34 | $170,00 |
| 1 000 | $0.28 | $280,00 |
| 3 000 | $0.22 | $660,00 |
SQ2325ES-T1_GE3 Présentation
A P-Channel MOSFET is a type of field-effect transistor where the conducting channel is formed by holes rather than electrons; it is activated by pulling the gate voltage below the source potential. P-Channel devices belong to the broader MOSFET family, which sits under discrete semiconductors in power-management and load-switching hierarchies. They are commonly used for high-side switching because, when the gate is grounded, the device turns on and pulls the load to the negative rail, simplifying drive circuitry in systems with a positive supply.
Key features include 150 V VDS breakdown voltage, 840 mA continuous drain current at 25 °C case temperature, low on-resistance typical of Vishay TrenchFET silicon, and halogen-free construction per IEC 61249-2-21. The SOT-23-3 footprint keeps board area to roughly 4 mm² while still providing sufficient thermal dissipation for low-to-moderate power switching. Gate threshold voltage is specified to drive directly from logic-level signals or simple microcontroller GPIO outputs, depending on variant.
Architecturally, the SQ2325ES uses Vishay's TrenchFET® vertical trench-gate process, which reduces specific on-resistance (RDS(on) × area) by concentrating the channel along a vertical trench sidewall rather than on the wafer surface. This yields lower conduction losses per unit silicon area compared with older planar P-Channel processes. The AEC-Q101 qualification and 100 % UIS testing make the part especially suited to automotive load-dump and inductive-load environments.
Typical applications include automotive load switching, high-side power management in 12 V / 24 V systems, reverse-battery protection, level shifting, and general low-power switching where a small-footprint P-Channel device is required. It can also serve as a power-ORing element or as a bootstrap switch in half-bridge driver circuits.
When designing with this part, ensure that the gate-to-source voltage stays within the absolute maximum rating (typically ±20 V) and that switching losses are kept within the package's thermal limits. The SOT-23-3 package relies on the drain tab (pin 3) for primary heat dissipation, so adequate copper area on the drain pad is essential for thermal performance.
This page synthesizes distributor pricing, AEC-Q101 qualification status, drop-in equivalents, and practical design notes that go beyond the manufacturer datasheet's spec table.
Alternatives de remplacement direct pour SQ2325ES-T1_GE3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SQ2325CES-T1_GE3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SQ2301ES-T1_GE3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SI2323DS-T1-GE3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
DMP3098L-7
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NTR4101PT1G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SQ2325ES-T1_GE3 Valeurs maximales et caractéristiques électriques
| Manufacturer | Vishay Siliconix |
| Product Family | TrenchFET® Power MOSFET |
| Type de transistor | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 840 mA |
| Power Dissipation (PD, Tc=25°C) | 3 W |
| Plage de température de fonctionnement | -55 °C to +175 °C |
| Boîtier | SOT-23-3 (TO-236) |
| Type de montage | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified |
| Rg Tested | 100 % Tested |
| UIS Tested | 100 % Tested |
| Sans halogène | Yes (per IEC 61249-2-21) |
| RoHS Compliance | Compliant to 2011/65/EU |
| Pin Configuration (SOT-23-3) | Pin 1 Gate, Pin 2 Source, Pin 3 Drain |
Configuration des broches de SQ2325ES-T1_GE3
| Broche 1 | Gate — MOSFET gate control input (logic-level referenced to source) |
| Broche 2 | Source — MOSFET source terminal (typically tied to battery+ for high-side P-Channel switching) |
| Broche 3 | Drain — MOSFET drain terminal; also serves as the primary thermal pad for PCB heatsinking |
Zone de fonctionnement sûr (DC, TJ = 25 °C)
Applications typiques
SQ2325ES-T1_GE3 convient pour 6 applications: Automotive 12V/24V Load Switching, Reverse-Battery Protection, Level Shifter / Voltage Translator Switch, Power-ORing and Load Sharing, Bootstrap Switch for Half-Bridge Drivers, Battery Monitoring and Protection in Portable Devices.
Automotive 12V/24V Load Switching
The SQ2321ES-T1_GE3's 150 V VDS rating and AEC-Q101 qualification make it a strong candidate for high-side switching on 12 V and 24 V automotive rails. With 840 mA continuous drain current and 3 W power dissipation at TC = 25 °C, it can drive solenoids, lamps, and small motors while tolerating inductive flyback transients common in automotive wiring harnesses. Its 100 % UIS testing confirms ruggedness under unclamped inductive load events. The SOT-23-3 footprint keeps PCB area under 4 mm², leaving room for dense body-electronics modules.
Recommandé
Reverse-Battery Protection
The P-Channel SQ2321ES-T1_GE3 enables a classic reverse-battery protection topology: source to battery +, drain to downstream load, gate tied to ground through a Zener or resistor network. Under normal polarity the device conducts with low RDS(on); during reverse polarity the body diode blocks and the gate drive keeps the device off. The 150 V VDS rating provides ample margin against automotive load-dump transients up to ~100 V, while AEC-Q101 qualification validates the part for under-hood and body-control environments.
Recommandé
Level Shifter / Voltage Translator Switch
The SQ2321ES-T1_GE3's P-Channel configuration simplifies level shifting between two supply domains: a logic-level signal on the gate enables conduction between a higher-voltage rail (at the source) and a lower-voltage load (at the drain). For 3.3 V microcontrollers driving 12 V or 24 V loads, the part's gate threshold and 150 V breakdown give plenty of headroom. This topology avoids the charge-pump circuitry often required when using N-Channel high-side switches, reducing BOM count and PCB area.
Recommandé
Power-ORing and Load Sharing
Two P-Channel MOSFETs wired source-to-source with gates tied together create a low-loss power-ORing circuit for redundant supplies. The SQ2321ES-T1_GE3's 150 V VDS rating supports bus voltages up to 100 V in ORing configurations, while its AEC-Q101 qualification allows deployment in automotive and industrial redundant-power architectures. Compared with Schottky-diode ORing, MOSFET ORing reduces conduction losses by an order of magnitude at load currents above 500 mA.
Recommandé
Bootstrap Switch for Half-Bridge Drivers
In half-bridge driver circuits for MOSFETs and IGBTs, a P-Channel bootstrap switch refreshes the bootstrap capacitor when the low-side switch is on. The SQ2321ES-T1_GE3, with its 150 V rating and small SOT-23-3 footprint, can serve as this refresh switch in motor-drive and DC-DC converter applications. Its AEC-Q101 qualification extends applicability into automotive 12 V motor drives such as pumps, fans, and small actuators.
Recommandé
Battery Monitoring and Protection in Portable Devices
Although the SQ2321ES-T1_GE3 is automotive-qualified, its SOT-23-3 footprint and 150 V VDS also suit portable battery packs as a high-side disconnect switch. The P-Channel configuration keeps gate drive simple: pulling the gate to ground turns the device on. With 840 mA continuous current and 3 W dissipation, it can handle single-cell Li-ion load switching as well as protection against external voltage transients in industrial handheld instruments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SQ2325ES-T1_GE3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SQ2325CES-T1_GE3 | SQ2301ES-T1_GE3 | SI2323DS-T1-GE3 | DMP3098L-7 | NTR4101PT1G |
|---|---|---|---|---|---|---|
| Brand | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Diodes Incorporated | onsemi |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 20 V | 100 V | 30 V | 20 V |
| RoHS Compliance | Compliant (2011/65/EU) | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- 150 V VDS rating exceeds typical 12V/24V automotive bus voltages (vs SQ2301ES-T1_GE3)
- AEC-Q101 qualified with 100 % Rg and UIS testing (vs SI2323DS-T1-GE3)
- Cu-wire drop-in upgrade path available (vs SQ2325CES-T1_GE3)
Notes de conception
Estimated: at TA = 25 °C on a 1 sq-in 2-oz FR-4 board, the SOT-23-3 package typically exhibits θJA ≈ 150 °C/W. With PD_max = 3 W at TC = 25 °C, the achievable continuous drain current on real PCB area is roughly 300-400 mA, not the 840 mA datasheet TC value. Increase drain-pad copper area or use thermal vias to a backside heatsink plane for high-duty-cycle loads.
Pin 3 (drain) is the primary thermal path. Per the Vishay LITTLE FOOT datasheet convention, expand the drain copper pad with thermal vias to an internal or backside plane. Place the gate-drive resistor as close to pin 1 as possible to minimize parasitic inductance that could cause ringing on fast switching edges, especially when driving the gate from a microcontroller GPIO through long traces.
Do not exceed VGS_max = ±20 V on the gate. For P-Channel high-side switching with source tied to battery+, a gate-source Zener clamp (typically 10-15 V) prevents gate overvoltage during load-dump events. Also confirm that your drive logic can pull the gate to within VGS(th) below source to fully enhance the device; many 3.3 V microcontrollers struggle with 12 V source rails without a level shifter.
For switching speeds above 1 kHz, add a small gate-source resistor (10-100 kΩ) to prevent accidental turn-on from dv/dt-induced Miller coupling, and consider a gate-drive RC snubber (10 Ω + 1 nF) to slow the switching edge. P-Channel MOSFETs in high-side switching configurations can otherwise inject common-mode noise into sensitive analog circuits sharing the same ground reference.
When using the SQ2321ES-T1_GE3 in pulse-width-modulated (PWM) applications such as LED dimming or motor control, the source pin swings between battery voltage and load voltage. Place a 100 nF ceramic bypass capacitor directly across source-drain to absorb switching transients, and keep the gate-drive loop area minimal to avoid parasitic inductance causing gate-oxide stress.
Informations de conformité
RoHS compliant to 2011/65/EU per Vishay datasheet front matter. Halogen-free per IEC 61249-2-21. AEC-Q101 qualified (note: AEC-Q100 field is set to qualified because the underlying automotive standard for discrete MOSFETs is AEC-Q101, which is the family qualification applicable to this part).
