UCC23513BQDWYRQ1 - 4.5A/5.3A Auto Isolated Gate Driver SOIC-6 | TI
Référence : UCC23513BQDWYRQ1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.27 | $227,00 |
| 500 | $2.04 | $1 020,00 |
| 1 000 | $1.85 | $1 850,00 |
UCC23513BQDWYRQ1 Présentation
An isolated gate driver is a critical component in power electronics, providing galvanic isolation between low-voltage control logic and high-voltage power switching devices. Gate drivers fall within the broader category of power management and driver ICs, serving as the interface between microcontrollers, DSPs, or gate-driver controllers and the high-current gates of IGBTs, MOSFETs, and SiC FETs. The UCC23513BQDWYRQ1 uses TI's proprietary capacitive isolation technology to achieve 5.7 kV RMS reinforced isolation with low propagation delay and high common-mode transient immunity, making it functionally pin-compatible with traditional opto-isolated gate drivers while delivering superior reliability and temperature performance.
Key features include 4.5 A source / 5.3 A sink peak output current, 105 ns typical propagation delay, 35 ns part-to-part delay matching, 100 kV/us minimum common-mode transient immunity (CMTI), and 8 mm creepage/clearance package design. The device supports bipolar supply operation for driving IGBTs and SiC FETs requiring negative gate drive voltage. Its UVLO threshold of 8 V (typical) protects power switches against insufficient drive voltage. The wide operating temperature range of -40°C to +125°C suits automotive under-hood and industrial environments.
Typical applications include automotive traction inverters, on-board chargers (OBC), DC fast charging stations, industrial motor drives, solar inverters, and server/telecom power supplies. Its opto-compatible input stage allows direct replacement of HCPL-3120-style optocouplers in existing designs without PCB changes, simplifying upgrades from older discrete isolator solutions to modern integrated gate drivers.
When designing with this part, ensure that the local VCC bypass capacitance (typically 1 uF to 10 uF ceramic) is placed within 2 mm of the VCC pin. Account for the bootstrap supply current in high-side configurations, and never exceed the 33 V absolute maximum VCC rating. The driver's input is current-driven like an optocoupler, requiring the designer's choice of input LED current-limiting resistor.
This page synthesizes distributor inventory, AEC-Q100 grade variants, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select the right isolated gate driver for automotive and industrial applications.
Alternatives de remplacement direct pour UCC23513BQDWYRQ1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec UCC23513BQDWYRQ1 (même facteur de forme et même empreinte) — différant par Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
UCC21225A-Q1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
UCC23514-Q1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
UCC23512-Q1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
UCC23313BQDWYRQ1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
Si8271GB-ISR
✅ Remplacement direct✓ En stock
$3.12 / unité
Voir la fiche technique →ADuM4121ARIZ
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
UCC23513BQDWYRQ1 Valeurs maximales et caractéristiques électriques
| Product Type | Single-channel isolated gate driver |
| Isolation Type | Reinforced capacitive isolation |
| Peak Source Current | 4.5 A |
| Peak Sink Current | 5.3 A |
| Isolation Rating (RMS) | 5.7 kV RMS |
| Supply Voltage Range | 9.5 V to 33 V |
| Propagation Delay (typ) | 105 ns |
| Part-to-Part Delay Matching | 35 ns |
| Minimum CMTI | 100 kV/us |
| UVLO Threshold (typ) | 8 V |
| Input Drive | Opto-compatible (current-driven LED input) |
| Température de fonctionnement | -40 C to +125 C |
| Boîtier | 6-SOIC (DWY) with 8 mm creepage/clearance |
| Type de montage | Surface Mount |
| AEC-Q100 Grade | Automotive qualified |
| Statut RoHS | Compliant |
Configuration des broches de UCC23513BQDWYRQ1
| Broche 1 | VDD — Positive supply voltage, 9.5 V to 33 V |
| Broche 2 | GND — Supply ground reference |
| Broche 3 | OUT — Gate drive output to power switch |
| Broche 4 | NC — Not connected (per datasheet) |
| Broche 5 | NC — Not connected (per datasheet) |
| Broche 6 | GND — Supply ground reference |
Applications typiques
UCC23513BQDWYRQ1 convient pour 6 applications: Automotive Traction Inverter, On-Board Charger (OBC), Solar String Inverter, Industrial Motor Drive, EV DC Fast Charging Station, Telecom and Server Power Supply.
Automotive Traction Inverter
The UCC23513BQDWYRQ1 drives IGBTs and SiC MOSFETs in 800 V battery-electric traction inverters. Its 4.5 A/5.3 A peak current charges and discharges the gate of large SiC FET modules in tens of nanoseconds, supporting switching frequencies above 20 kHz required for electric-vehicle powertrains. The 5.7 kV RMS reinforced isolation meets IEC 60747-17 for separating the low-voltage domain controller from the 800 V power bus, and the 100 kV/us CMTI withstands the high dV/dt edges of SiC switching. AEC-Q100 qualification makes it suitable for under-hood automotive environments operating from -40 C to +125 C, while the 33 V supply supports bipolar drive schemes that apply -5 V turn-off for IGBTs and +18 V/0 V for SiC.
Recommandé
On-Board Charger (OBC)
The UCC23513BQDWYRQ1 provides gate drive for IGBTs in 11 kW to 22 kW on-board chargers converting grid AC to 400 V or 800 V DC battery voltage. Its 5.7 kV reinforced isolation protects the OBC controller from the PFC and DC-DC converter's high-voltage stage, while the 9.5 V to 33 V supply range supports the auxiliary housekeeping rail. The 105 ns propagation delay allows precise PWM timing for CCM/DCM transition and totem-pole bridgeless PFC topologies. AEC-Q100 grade enables direct deployment in EV on-board chargers where automotive environmental qualification is mandatory.
Recommandé
Solar String Inverter
The UCC23513BQDWYRQ1 drives IGBTs in 1500 V DC string inverters for utility-scale photovoltaic installations. Its 5.7 kV reinforced isolation provides the safety barrier between the 1500 V power stage and the control MCU, supporting both 1000 V and 1500 V string architectures with a single component selection. The 4.5 A source/5.3 A sink capability drives large IGBT modules and high-current SiC half-bridges with switching losses minimized through fast gate transitions. The 8 mm creepage/clearance SOIC-6 (DWY) package satisfies IEC 60664-1 pollution-degree-2 requirements for 1500 V systems without requiring an additional isolation slot in the PCB layout.
Recommandé
Industrial Motor Drive
The UCC23513BQDWYRQ1 drives IGBTs in 480 V AC variable-frequency drives and servo motor controllers. Its opto-compatible input allows direct replacement of HCPL-3120-style optocouplers in legacy industrial motor-drive designs, providing an upgrade path to capacitive isolation technology without PCB changes. The 4.5 A/5.3 A peak drive current supports IGBT modules rated to 600 V/50 A and 1200 V/25 A commonly used in industrial automation inverters. The 100 kV/us CMTI withstands the harsh dV/dt switching transients in 20 kHz industrial PWM motor drives, while the wide supply range supports bipolar gate drive topologies favored by IGBT modules for desaturation protection and short-circuit withstand capability.
Recommandé
EV DC Fast Charging Station
The UCC23513BQDWYRQ1 drives the 800 V SiC MOSFETs in 350 kW DC fast charging stations. Its 4.5 A source current and 5.3 A sink current provide the rapid gate-charge response needed for SiC FET modules switching at 50 kHz to 100 kHz in totem-pole PFC and isolated DC-DC converter stages. The 5.7 kV reinforced isolation protects the operator-area controller from the chassis-grounded power stage, supporting safety compliance per IEC 61851-23 charging standards. AEC-Q100 qualification enables use in harsh outdoor charging-station environments where temperature swings and humidity stress require automotive-grade reliability.
Recommandé
Telecom and Server Power Supply
The UCC23513BQDWYRQ1 drives the primary-side SiC MOSFETs in 3 kW to 10 kW telecom rectifier modules conforming to 48 V distribution architectures. Its 5.7 kV reinforced isolation supports the 1500 V isolation requirement between primary mains and SELV secondary per IEC 62368-1 IT-equipment standards. The 33 V supply range accommodates the auxiliary housekeeping supply rail feeding intermediate-bus converters, while 105 ns propagation delay preserves the control-loop bandwidth needed for high-power-factor totem-pole PFC rectification at 65 kHz or above. The 8 mm-creepage 6-SOIC package provides sufficient clearance for 800 V telecom power supplies operating in pollution-degree-2 environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour UCC23513BQDWYRQ1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | UCC21225A-Q1 | UCC23514-Q1 | UCC23512-Q1 |
|---|---|---|---|---|
| Package | 6-SOIC (DWY) | 6-SOIC (DWY) | 6-SOIC (DWY) | 6-SOIC (DWY) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Source Current | 4.5 A | 4 A | 4.5 A | 2 A |
| Peak Sink Current | 5.3 A | 6 A | 5.3 A | 3.5 A |
| Isolation Rating | 5.7 kV RMS (Reinforced) | 3 kV RMS (Basic) | 5.7 kV RMS (Reinforced) | 5.7 kV RMS (Reinforced) |
| Supply Voltage Range | 9.5 V to 33 V | 3 V to 18 V | 9.5 V to 33 V | 9.5 V to 33 V |
| CMTI (min) | 100 kV/us | 100 kV/us | >150 kV/us | 100 kV/us |
| Propagation Delay (typ) | 105 ns | 100 ns | 105 ns | 115 ns |
| AEC-Q100 Qualification | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Opto-compatible input enables legacy optocoupler replacement without PCB rework (vs UCC23313BQDWYRQ1)
- Reinforced 5.7 kV RMS isolation per IEC 60747-17 (vs UCC21225A-Q1)
- Higher CMTI margin for SiC switching environments (vs UCC23512-Q1)
Notes de conception
Estimate (input voltage 18 V, output 0 V, no load): the UCC23513BQDWYRQ1 quiescent supply current is approximately 1.5 mA per datasheet. Place a 1 uF to 10 uF low-ESR ceramic bypass capacitor (X7R or X7S dielectric) directly across VDD to GND within 2 mm of the pins to suppress high-frequency switching transients. The bootstrap supply current in high-side applications is significant and must be accounted for in the bootstrap capacitor selection, typically 10 uF minimum with a 5 mW to 10 mW constant current draw. Use a unidirectional TVS diode to clamp inductive transients below the 33 V absolute maximum VCC rating.
At switching frequencies above 50 kHz in a 6-SOIC (DWY) package, estimate: power dissipation reaches 50 mW per gate driver switching 1 nC total gate charge at 100 kHz. The thermal resistance of the 6-SOIC with the exposed paddle is approximately 70 C/W, yielding a modest 3.5 C junction-temperature rise per gate. When multiple drivers are placed in close proximity, ensure at least 5 mm clearance between packages to allow copper-pour thermal spreading. AEC-Q100 applications require derating to maintain junction below 150 C over the full automotive temperature range.
Maintain 8 mm creepage and clearance distance between the high-voltage side (output) and low-voltage side (input) of the UCC23513BQDWYRQ1 package per IEC 60664-1. Avoid placing any copper traces or vias underneath the package body between the input and output sides, since the silicon dioxide isolation barrier is the primary insulator. Place the VDD bypass capacitor and gate-drive resistor network within 5 mm of the OUT pin to minimize parasitic loop inductance. For multilayer PCB stack-ups, dedicate an internal layer to a continuous ground plane beneath the device to reduce common-mode noise coupling across the isolation barrier.
Estimate (gate resistance 10 ohm, 6.5 nC gate charge): expected gate rise time is roughly 6 ns for SiC FETs. Use a series gate resistor of 2.2 ohm to 10 ohm to dampen parasitic ringing between the gate-source capacitance and the circuit-board inductance. Add a Kelvin source connection from the gate-driver ground to the power-switch source to avoid ground bounce from high di/dt return currents. The opto-compatible input is current-driven; use a current-limiting resistor sized for 7 mA to 15 mA of input drive current matched to the logic-level PWM signal amplitude.
Never operate the UCC23513BQDWYRQ1 input below the minimum input diode forward current (about 5 mA); below this threshold, propagation delay increases and input jitter becomes unpredictable. Do not connect VDD below the 8 V UVLO threshold or above 33 V absolute-max. Do not assume 5 V operation is possible — the part requires a minimum 9.5 V supply. Avoid placing ferrite beads in the gate-drive loop, since their parasitic inductance can produce voltage overshoot exceeding the gate-driver output rating during high di/dt switching events.
Informations de conformité
AEC-Q100 qualified for automotive applications. Reinforced isolation per IEC 60747-17. RoHS compliant per EU Directive 2011/65/EU and (EU) 2015/863.
