BSC0901NSATMA1 vs BSC010NE2LSIATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC0901NSATMA1 द्वारा Infineon और BSC010NE2LSIATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | BSC0901NSATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS (Trench) |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| ऑपरेटिंग तापमान रेंज | -55C to +150C | -55C to +150C (TJ) |
| पैकेज | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-7 (TDSON-8 EP) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| नमी संवेदनशीलता स्तर (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| RoHS स्थिति | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | Single N-Channel |
| Series / Family | — | OptiMOS 25V |
| ट्रांज़िस्टर प्रकार | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| पिन काउंट | — | 8 |
| Gate Drive | — | Logic-level compatible |
| MSL स्तर | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |