IPB024N10N5ATMA1 vs BSC098N10NS5ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPB024N10N5ATMA1 द्वारा Infineon और BSC098N10NS5ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ सक्रियInfineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPB024N10N5ATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | 9.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | [DATA_NEEDED: Qg] |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (junction) | [DATA_NEEDED: Tj min/max] |
| पैकेज | PG-TO263-7 (D2PAK-7) | PG-TDSON-8-7 (SuperSO8 5x6) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | 1 (unlimited floor life at <30C/85% RH) | 1 |
| Packaging | Tape & Reel (13-inch reel) | — |
| हैलोजन फ्री | Yes (per Infineon product family policy) | — |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |