IRF1405PBF vs IRFZ34NPBF तुलना
विस्तृत दोनों ओर की तुलना IRF1405PBF द्वारा Infineon और IRFZ34NPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF1405PBF | IRFZ34NPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| ट्रांज़िस्टर प्रकार | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET (Planar DMOS, 5th generation) |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| पैकेज | TO-220AB (through-hole) | TO-220AB (3-pin + tab, through-hole) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | JEDEC standard |
| RoHS स्थिति | PbF suffix indicates lead-free / RoHS compliant | Compliant |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| ऑपरेटिंग तापमान रेंज | — | -55 C to +175 C |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |