IRFR5305TRLPBF vs IRF5305PBF तुलना

विस्तृत दोनों ओर की तुलना IRFR5305TRLPBF द्वारा Infineon और IRF5305PBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Infineon
IRFR5305TRLPBF IRFR5305TRLPBF - -55V P-Channel MOSFET, 31A, 65mΩ | Infineon

IRFR5305TRLPBF - -55V P-Channel MOSFET, 31A, 65mΩ | Infineon

IRFR5305TRLPBF ✓ सक्रिय
Infineon
IRF5305PBF IRF5305PBF - 55V P-Ch HEXFET MOSFET 31A TO-220 | Infineon

IRF5305PBF - 55V P-Ch HEXFET MOSFET 31A TO-220 | Infineon

IRF5305PBF ✓ सक्रिय

विशेषता तुलना

पैरामीटर IRFR5305TRLPBF IRF5305PBF
ब्रांड Infineon Infineon
श्रेणी MOSFETs MOSFETs
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
ऑपरेटिंग जंक्शन तापमान -55C to +175C -55C to +175C
पैकेज TO-252AA (DPAK), surface mount TO-220AB (through-hole, 3-pin + tab)
माउंटिंग प्रकार Surface Mount Through Hole
Technology HEXFET fifth-generation planar MOSFET HEXFET (planar DMOS)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Total Gate Charge (Qg) — 42 nC (typical)
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
RoHS स्थिति — Compliant

डेटाशीट और संसाधन

सभी उत्पादों को देखें BOM बनाएं कीट की अनुरोध