RTAX4000D-CQ352B vs RTAX2000D-1CQ352E तुलना
विस्तृत दोनों ओर की तुलना RTAX4000D-CQ352B द्वारा Microchip Technology और RTAX2000D-1CQ352E द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX4000D-CQ352B ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX4000D-CQ352B | RTAX2000D-1CQ352E |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Logic Cells | 55,440 | — |
| Configurable Logic Blocks (CLBs) | 36,960 | — |
| Equivalent Gates | 4,000,000 | — |
| System Gates (cells, per Jotrin listing) | 33,600 | — |
| Family | RTAX-DSP (RTAX-S/SL/DSP) | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Process Technology | 0.15 um | — |
| Core Supply Voltage | 1.5 V (1.425 V to 1.575 V) | — |
| Combinatorial CLB Delay | [DATA_NEEDED: combinatorial CLB delay for standard speed grade; 0.99 ns max is specified for the -1 speed grade variant] | — |
| Technology Type | Antifuse, one-time programmable, radiation-tolerant | — |
| पैकेज | 352-pin Ceramic CQFP (CQFP-352) | CQFP352 (352-terminal Ceramic Quad Flat Pack) |
| माउंटिंग प्रकार | Surface Mount | — |
| Configuration | Live at power-up, single chip, no external configuration memory | — |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Application Domain | Space flight systems | — |
| Programmability | OTP (one-time programmable antifuse) | One-time programmable (antifuse) |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | — |
| Equivalent System Gates | — | 2000000 gates |
| Logic Organization | — | 19712 CLBs |
| Technology | — | Digital CMOS FPGA, antifuse (nonvolatile) |
| ऑपरेटिंग तापमान रेंज | — | -55C to +125C |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Rated) | — | 200 krad |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits with optional EDAC protection |
| सप्लाई वोल्टेज | — | [DATA_NEEDED: core/supply voltage] |
| User I/O Terminals | — | [DATA_NEEDED: user I/O count for CQ352] |
| Max System Frequency | — | [DATA_NEEDED: max system frequency] |
| Radiation Environment Target | — | Space-based applications |
| Commercial Prototype Equivalent | — | Axcelerator family device |