BSC016N06NSTATMA1 vs BSC028N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil BSC016N06NSTATMA1 dari Infineon dan BSC028N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC016N06NSTATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 MOSFET N-Channel (OptiMOS 5)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C —
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Series OptiMOS OptiMOS 5
Part Number Base — BSC028N06NS
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Suhu Hubung Kerja — -55C to +175C
Bebas Halogen — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Spek dan Sumber

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