BSC034N06NSATMA1 vs BSC027N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC034N06NSATMA1 dari Infineon dan BSC027N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC034N06NSATMA1 BSC027N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] ±20 V
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] Logic-level
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
Rentang Suhu Kerja -55C to +150C -55°C to +150°C
Technology OptiMOS 5 MOSFET (Metal Oxide)
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Paket / Case — PG-TDSON-8-7 (SuperSO8 5x6)
Jumlah Pin — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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