BSC047N08NS3GATMA1 vs BSC123N08NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC047N08NS3GATMA1 dari Infineon dan BSC123N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC047N08NS3GATMA1 BSC123N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 —
Technology OptiMOS™ 3 (N-channel trench) —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 18 A —
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V —
Power Dissition (Tc) 125 W —
Power Dissipation (Ta) 2.5 W 2.5 W
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) —
Avalanche Rated 100% tested —
Paket PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C (Tj) —
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Suhu Hubung Kerja — -55C to +150C
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant with exemption
Automotive Qualified — Yes (AEC-Q101)

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