BSC0502NSIATMA1 vs BSC018N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC0502NSIATMA1 dari Infineon dan BSC018N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC0502NSIATMA1 BSC018N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (Trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Rentang Suhu Kerja -55C to +150C -55°C to +150°C (TJ)
Paket PG-TDSON-8 (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free plating)
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ TC=25°C — 100 A
Continuous Drain Current (ID) @ TA=25°C — 30 A
Power Dissipation (PD) @ TC=25°C — 125 W
Power Dissipation (PD) @ TA=25°C — 2.5 W
RDS(on) Max @ VGS=10 V — 1.8 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Tested — 100% (per datasheet)
JEDEC Qualification — Yes (qualified per JEDEC for target applications)

Spek dan Sumber

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