BSC066N06NSATMA1 vs BSZ065N06LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC066N06NSATMA1 dari Infineon dan BSZ065N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC066N06NSATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | 2.3 V |
| Total Gate Charge (Qg) | 26 nC (typ) | 13 nC @ VGS=4.5 V |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Suhu Hubung Kerja | -55°C to +150°C | — |
| Paket | PG-TDSON-8-6 (TDSON EP) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | OptiMOS™ 5 logic-level |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Input Capacitance (Ciss) | — | 1.8 nF |
| Rentang Suhu Kerja | — | -55°C to +150°C |