BSC076N04NDATMA1 vs BSC050N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC076N04NDATMA1 dari Infineon dan BSC050N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC076N04NDATMA1 BSC050N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) [DATA_NEEDED: VGS(th) typ/min/max]
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) OptiMOS 3 (trench MOSFET)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Suhu Hubung Kerja -55 C to +175 C —
Paket / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Paket — PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Rentang Suhu Kerja — -55C to +150C
Avalanche Energy Rated — Yes (single-pulse avalanche)
Status RoHS — Compliant
Level MSL — 1

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