BSC0901NSATMA1 vs BSC0902NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC0901NSATMA1 dari Infineon dan BSC0902NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0901NSATMA1 BSC0902NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 30V —
Technology N-Channel Trench MOSFET (OptiMOS) —
Drain-to-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 28 A —
On-State Resistance RDS(on) Max at VGS=10V 1.9 mOhm 2.8 mOhm
On-State Resistance RDS(on) Typ at VGS=10V [DATA_NEEDED: RDS(on) typical] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg total] —
Avalanche Energy (EAS) 80 mJ —
Power Dissipation (PD) at Tc 69 W —
Power Dissipation (PD) at Ta 2.5 W —
Rentang Suhu Kerja -55C to +150C -55C to +150C (junction)
Paket TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm PG-TDSON-8-6 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Tingkat Sensitivitas Kekeringan (MSL) 1 —
Built-in Body Diode Yes —
Status RoHS Compliant Compliant
Configuration Single N-Channel with Built-in Diode —
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Level MSL — [DATA_NEEDED: MSL rating]
Lead-Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon