BSC0901NSIATMA1 vs BSC0902NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC0901NSIATMA1 dari Infineon dan BSC0902NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0901NSIATMA1 BSC0902NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W —
Rentang Suhu Kerja -55 C to +150 C -55C to +150C (junction)
Paket PG-TDSON-8-6 (5x6 mm with exposed pad) PG-TDSON-8-6 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Bebas Halogen Yes Yes
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes

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