BSC094N06LS5ATMA1 vs BSC0902NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC094N06LS5ATMA1 dari Infineon dan BSC0902NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC094N06LS5ATMA1 BSC0902NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25°C 36 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TDSON-8-6 (SuperSO8 5x6) PG-TDSON-8-6 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Rentang Suhu Kerja — -55C to +150C (junction)
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
Bebas Halogen — Yes

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