BSP315PH6327XTSA1 vs BSS192PH6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSP315PH6327XTSA1 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP315PH6327XTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel P-Channel
Technology OptiMOS (enhancement mode) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) [DATA_NEEDED: Tj max / operating temp]
Paket PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (per JEDEC J-STD-020) —
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Automotive Qualification — AEC-Q101 (per distributor listing)
Series — SIPMOS Small-Signal-Transistor
Part Status — Active
Status RoHS — [DATA_NEEDED: explicit RoHS status from datasheet]

Spek dan Sumber

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