BSS84-7-F vs BSS84PH6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS84-7-F dari Diodes Incorporated dan BSS84PH6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Diodes Incorporated
BSS84-7-F BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS84-7-F BSS84PH6327XTSA2
Merek Diodes Incorporated Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Mode of Operation Enhancement Mode —
Drain-Source Voltage VDS 50 V —
Continuous Drain Current ID 130 mA (Ta) —
Power Dissipation PD 300 mW (Ta) —
Gate-Source Voltage VGS [DATA_NEEDED: Gate-Source Voltage VGS] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: Gate-Source Threshold Voltage] —
On-State Resistance RDS(on) [DATA_NEEDED: On-State Resistance RDS(on)] —
Total Gate Charge Qg [DATA_NEEDED: Total Gate Charge] —
Input Capacitance Ciss [DATA_NEEDED: Input Capacitance Ciss] —
Configuration Single FET —
Paket SOT-23-3 PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Terminal Finish Matte tin plated (solderable per MIL-STD-202) —
Packaging Suffix -7-F (Tape and Reel) —
Status RoHS Compliant Compliant
Technology Si —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Suhu Kerja — -55C to +150C
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Polarity — P-Channel Enhancement Mode
Lead-Free — Yes

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