BSZ110N08NS5ATMA1 vs BSC040N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ110N08NS5ATMA1 dari Infineon dan BSC040N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ110N08NS5ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Part Number | — | BSC040N08NS5ATMA1 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | — | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | — | 4 mOhm |
| Power Dissipation (Ta=25C, 1in² PCB) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 104 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Primary Application | — | Synchronous rectification in telecom and server power supplies |