EP4CE40U19A7N vs EP4CE40U19I7N Perbandingan
Perbandingan bersamaan detil EP4CE40U19A7N dari Intel dan EP4CE40U19I7N dari Altera. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE40U19A7N | EP4CE40U19I7N |
|---|---|---|
| Merek | Intel | Altera |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV E | — |
| Family | EP4CE40 | Cyclone IV E |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory (bits) | 1,161,216 (113 Kbytes) | 1,161,216 |
| Embedded Multipliers (18x18) | 116 | — |
| M9K Memory Blocks | 66 | — |
| Maximum User I/O | 328 | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | — |
| Paket | 484-ball FBGA (U19) | 484-FBGA (U19, 19x19 mm, 1.0 mm pitch) |
| Grade | Automotive (A7 = -40C to 125C TJ) | — |
| Process Technology | 60 nm low-power CMOS | — |
| Suhu Hubung Kerja | -40C to +125C | — |
| Storage Temperature | -65C to +150C | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| I/O Standards | LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS | LVCMOS/LVTTL 1.2 V / 2.5 V / 3.0 V / 3.3 V |
| Status RoHS | Compliant | Compliant (lead-free) |
| Logic Elements | — | 39,600 |
| Embedded Memory (approx) | — | 144 Kbytes |
| Embedded 18x18 Multipliers | — | 116 |
| Maximum User I/Os | — | 328 |
| Core Voltage (VCCINT) | — | 1.0 V / 1.2 V |
| Process | — | 60 nm low-k |
| Configuration | — | SRAM-based (volatile, external flash required) |
| Speed Grade | — | 7 |
| Suhu Kerja | — | -40 °C to +100 °C (Industrial, junction) |
| Tipe Mounting | — | Surface Mount (BGA) |