EP4CGX22BF14I7 vs EP4CGX22BF14I7N Perbandingan
Perbandingan bersamaan detil EP4CGX22BF14I7 dari Intel dan EP4CGX22BF14I7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Intel
EP4CGX22BF14I7N - 22K LE Cyclone IV GX FPGA, 169-LBGA | Intel (Altera)
EP4CGX22BF14I7N ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | EP4CGX22BF14I7 | EP4CGX22BF14I7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | Cyclone IV GX | — |
| Logic Elements | 21,280 | — |
| Total Block Memory Bits | 774,144 | — |
| Total RAM Bits | 21,280 (M9K + MLAB) | — |
| Number of LABs/CLBs | 47 | — |
| Number of Logic Elements/Cells | 21,280 | — |
| Number of I/O | 72 | — |
| Voltage - Supply | 1.2 V core | — |
| Suhu Kerja | -40C to +100C (I7 industrial grade, [DATA_NEEDED: exact TJ spec]) | -40 °C to +100 °C (industrial, 'I7N' speed/temp grade) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | 169-LBGA (FBGA-169) | 169-LBGA (FineLine BGA, F14, 14×14 mm, 1.0 mm pitch) |
| Transceivers | 2 channels up to 3.125 Gbps [DATA_NEEDED: exact Gbps rating] | 2 (up to 3.125 Gbps) |
| Number of Multipliers (18x18) | 66 [DATA_NEEDED: not in web data - from internal knowledge, validate against datasheet] | — |
| Number of PLLs | 2 [DATA_NEEDED: not in web data - from internal knowledge, validate against datasheet] | — |
| Status RoHS | [DATA_NEEDED: confirm from manufacturer page] | Compliant (per distributor listings) |
| Lead-Free | [DATA_NEEDED: confirm from manufacturer page] | — |
| Family | — | Cyclone IV GX |
| Device | — | EP4CGX22 |
| Logic Elements (LE) | — | 21,280 |
| Logic Blocks | — | 47 (per digchip datasheet summary) |
| Embedded Memory Bits | — | 774,144 (594 Kbits) |
| Maximum User I/O Pins | — | 72 |
| Multipliers (18×18) | — | [DATA_NEEDED: 18x18 multiplier count] |
| PLLs | — | 4 (general-purpose) |
| Core Voltage | — | 1.2 V |
| Process Technology | — | 60 nm |
| Configuration | — | SRAM, serial (AS) and parallel (AP) modes, JTAG |