EPM570M100C5N vs EPM570GM100C5N Perbandingan

Perbandingan bersamaan detil EPM570M100C5N dari Intel dan EPM570GM100C5N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EPM570M100C5N EPM570GM100C5N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family MAX II MAX II
Series EPM570 —
Device Type CPLD (Complex Programmable Logic Device) CPLD (Complex Programmable Logic Device)
Macrocell Count 440 —
Logic Elements 570 440
User I/Os 76 76
Number of Logic Blocks / Array Blocks [DATA_NEEDED: number of LABs] —
Jumlah Pin 100 100
Paket 100-MBGA (FineLine BGA, 6 x 6 mm, 0.5 mm pitch) —
Maximum Frequency (fMAX) 201.1 MHz —
Pin-to-Pin Propagation Delay 5.4 ns —
Operating Supply Voltage (Core) 2.5 V / 3.3 V —
I/O Voltage Support 1.5 V / 1.8 V / 2.5 V / 3.3 V (MultiVolt) —
On-Chip User Flash Memory (UFM) 8 Kbits —
Process Technology 0.18 um, 6-layer-metal flash —
Programming Interface JTAG (IEEE 1149.1) and ISP JTAG (IEEE 1149.1)
Rentang Suhu Kerja 0 C to +85 C (Commercial) —
Tipe Mounting Surface Mount (BGA) Surface Mount
Status RoHS Lead-Free / Compliant —
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Macro Cells — 440
Package Type — Micro FBGA-100 (MBGA), 6 x 6 mm, 0.5 mm pitch
Pin-to-Pin Delay (tPD) — 5.4 ns
Maximum Frequency — 201.1 MHz
Suhu Kerja — -40C to +125C (industrial)
Tegangan Pemuat — 1.8 V core (MultiVolt I/O 1.5 V to 3.3 V)
Program Memory Type — Flash (non-volatile, in-system programmable)
Lead Free / RoHS — Yes / Compliant
Logic Family — CMOS

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