H5ANAG4NBJR-RDC vs H5ANAG6NBJR-RDC Perbandingan
Perbandingan bersamaan detil H5ANAG4NBJR-RDC dari SK hynix dan H5ANAG6NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG4NBJR-RDC | H5ANAG6NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | 16 Gb |
| Organisasi | 4G x 4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Laju Data | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) | 2666 Mbps (speed grade -RDC) |
| Paket | 78-ball FBGA | FBGA (Ball Grid Array), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Prefetch | 16n (bank group architecture) | — |
| Antarmuka | SSTL-12 | Synchronous, double data rate |
| Fitur | Bank groups, CA parity, data CRC, ODT, DLL-off mode | — |
| Refresh | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] | — |
| Operating Temperature (case) | -40C to +85C (industrial; extended to 95C per datasheet conditions) | — |
| Temperature Grade Suffix | RDC - industrial temperature, lead-free, halogen-free | — |
| Status RoHS | Compliant (lead-free / halogen-free per RDC suffix) | [DATA_NEEDED: RoHS Status] |
| VDDQ | 1.2 V | — |
| Product Family | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series | — |
| Memory Organization | — | 16Gb x16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Clocking | — | Fully synchronous to both clock edges |
| Technology | — | CMOS |
| Standard | — | JEDEC DDR4 SDRAM |
| Application | — | Main memory |
| Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| On-Die Termination (ODT) | — | Supported (DDR4 feature) |
| Bank Group Architecture | — | DDR4 bank groups (per JEDEC DDR4) |