IAUC120N04S6L012ATMA1 vs BSZ110N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC120N04S6L012ATMA1 dari Infineon dan BSZ110N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC120N04S6L012ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | OptiMOS 5 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (junction) | [DATA_NEEDED: operating temperature range] |
| Paket | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Technology | — | OptiMOS 5 N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Configuration | — | Single MOSFET |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |