IAUCN04S7L042GATMA1 vs IAUCN04S7L050HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7L042GATMA1 dari Infineon dan IAUCN04S7L050HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Paket | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Tipe Mounting | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (Tj) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |