IPC100N04S5L1R5ATMA1 vs BSC014N04LSTATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S5L1R5ATMA1 dari Infineon dan BSC014N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S5L1R5ATMA1 BSC014N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V —
Polarity / Channel Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) Max 40 V —
Gate-Source Voltage (VGS) Max 20 V —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 115 W —
On-Resistance RDS(on) at VGS=10 V 1.5 mOhm (typ) —
On-Resistance RDS(on) at VGS=4.5 V 1.8 mOhm (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
Rentang Suhu Kerja -55C to +175C -55°C to +150°C
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8 FL (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260C peak reflow) MSL1
AEC-Q101 Qualified Yes —
Status RoHS Compliant (Green Product) Compliant
Avalanche Tested 100% —
Part Number — BSC014N04LSTATMA1
Technology — OptiMOS 5 (N-Channel Trench)
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) @ TA=25°C — 33 A
Continuous Drain Current (ID) @ TC=25°C — 100 A
On-Resistance R DS(on) max @ VGS=10V — 1.45 mΩ
R DS(on) typical @ VGS=10V — [DATA_NEEDED: RDS(on) typical]
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 115 W
Jumlah Pin — 8
Lead-Free — Yes

Spek dan Sumber

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