IPD30N10S3L34ATMA1 vs IPD034N06N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA1 dari Infineon dan IPD034N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Level MSL 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL rating]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Series — OptiMOS 3
Technology — N-Channel Trench MOSFET (OptiMOS 3)
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Pin Configuration — 3-Pin (2 + Tab)
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Status RoHS — Compliant (Pb-free green finish)
Automotive Qualified — Yes (per Infineon product page)

Spek dan Sumber

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