IQD020N10NM5CGATMA1 vs BSC050N04LSGATMA1 Perbandingan
Perbandingan bersamaan detil IQD020N10NM5CGATMA1 dari Infineon dan BSC050N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQD020N10NM5CGATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55C to +150C |
| Paket | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating from datasheet] | 1 |
| Status RoHS | Compliant | Compliant |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |